Gate Structure of a Semiconductor Device and Method of Forming Same

ABSTRACT

A semiconductor device having a gate structure and a method of forming same are provided. The semiconductor device includes a substrate and a gate structure over the substrate. The substrate has a first region and a second region. The gate structure extends across an interface between the first region and the second region. The gate structure includes a first gate dielectric layer over the first region, a second gate dielectric layer over the second region, a first work function layer over the first gate dielectric layer, a barrier layer along a sidewall of the first work function layer and above the interface between the first region and the second region, and a second work function layer over the first work function layer, the barrier layer and the second gate dielectric layer. The second work function layer is in physical contact with a top surface of the first work function layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation and claims the benefit of U.S. Pat.Application No. 17/671,145, filed on Feb. 14, 2022, which is acontinuation and claims the benefit of U.S. Pat. Application No.16/914,880, filed on Jun. 29, 2020, now U.S. Pat. No. 11,251,092, issuedFeb. 15, 2022, each application is hereby incorporated herein byreference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise thatshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates an example of a FinFET in a three-dimensional view inaccordance with some embodiments.

FIGS. 2, 3, 4, 5, 6, 7, 8A, 8B, 9A, 9B, 10A, 10B, 10C, 10D, 11A, 11B,12A, 12B, 13A, 13B, 14A, 14B, 15A, 15B, 16A, and 16B are cross-sectionalviews of intermediate stages in the manufacturing of a FinFET device inaccordance with some embodiments.

FIGS. 17-22 are cross-sectional views of intermediate stages in themanufacturing of a gate structure of a FinFET device in accordance withsome embodiments.

FIG. 23 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIG. 24 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIG. 25 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIGS. 26-32 are cross-sectional views of intermediate stages in themanufacturing of a gate structure of a FinFET device in accordance withsome embodiments.

FIG. 33 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIG. 34 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIG. 35 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIGS. 36-43 are cross-sectional views of intermediate stages in themanufacturing of a gate structure of a FinFET device in accordance withsome embodiments.

FIG. 44 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIG. 45 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIG. 46 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments.

FIG. 47 is a flow diagram illustrating a method of forming a gatestructure in accordance with some embodiments.

FIG. 48 is a flow diagram illustrating a method of forming a gatestructure in accordance with some embodiments.

FIG. 49 is a flow diagram illustrating a method of forming a gatestructure in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature’s relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments will be described with respect to a specific context,namely, a gate structure of a semiconductor device and a method offorming the same. Various embodiments presented herein are discussed inthe context of a FinFET device formed using a gate-last process. Inother embodiments, a gate-first process may be used. Also, someembodiments contemplate aspects used in planar transistor devices,multiple-gate transistor devices, 2D transistor devices, gate-all-aroundtransistor devices, nanowire transistor devices, or the like. Variousembodiments presented herein allow for forming a barrier layer alongsidewall of one or more work function layers at an interface betweenadjacent semiconductor devices. The barrier layer allows for preventingor reducing a metal diffusion from a work function layer of a gate stackof a first semiconductor device to a work function layer of a gate stackof a second semiconductor device. Furthermore, the barrier layerisolates the gate stack of the first semiconductor device from the gatestack of the second semiconductor device and prevents or reduces athreshold voltage shift due to the metal diffusion. In addition, variousprocess steps for forming the barrier layer may be incorporated into aprocess flow for forming a gate stack of a semiconductor device.

FIG. 1 illustrates an example of a FinFET in a three-dimensional view,in accordance with some embodiments. The FinFET comprises a fin 52 on asubstrate 50 (e.g., a semiconductor substrate). Isolation regions 56 aredisposed in the substrate 50, and the fin 52 protrudes above and frombetween neighboring isolation regions 56. Although the isolation regions56 are described/illustrated as being separate from the substrate 50, asused herein the term “substrate” may be used to refer to just thesemiconductor substrate or a semiconductor substrate inclusive ofisolation regions. Additionally, although the fin 52 is illustrated as asingle, continuous material as the substrate 50, the fin 52 and/or thesubstrate 50 may comprise a single material or a plurality of materials.In this context, the fin 52 refers to the portion extending between theneighboring isolation regions 56.

A gate dielectric layer 92 is along sidewalls and over a top surface ofthe fin 52, and a gate electrode 94 is over the gate dielectric layer92. Source/drain regions 82 are disposed in opposite sides of the fin 52with respect to the gate dielectric layer 92 and the gate electrode 94.FIG. 1 further illustrates reference cross-sections that are used inlater figures. Cross-section A-A is along a longitudinal axis of thegate electrode 94 and in a direction, for example, perpendicular to adirection of a current flow between the source/drain regions 82 of theFinFET. Cross-section B-B is perpendicular to the cross-section A-A andis along the longitudinal axis of the fin 52 and in the direction of,for example, the current flow between the source/drain regions 82 of theFinFET. Cross-section C-C is parallel to the cross-section A-A andextends through a source/drain region of the FinFET. Subsequent figuresrefer to these reference cross-sections for clarity.

FIGS. 2, 3, 4, 5, 6, 7, 8A, 8B, 9A, 9B, 10A, 10B, 10C, 10D, 11A, 11B,12A, 12B, 13A, 13B, 14A, 14B, 15A, 15B, 16A, and 16B are cross-sectionalviews of intermediate stages in the manufacturing of a FinFET device, inaccordance with some embodiments. FIGS. 2 through 7 illustratecross-sectional views along the reference cross-section A-A illustratedin FIG. 1 , except for multiple fins/FinFETs. FIGS. 8A, 9A, 10A, 11A,12A, 13A, 14A, 15A, and 16A are illustrated along the referencecross-section A-A illustrated in FIG. 1 and FIGS. 8B, 9B, 10B, 11B, 12B,13B, 14B, 15B, and 16B are illustrated along the reference cross-sectionB-B illustrated in FIG. 1 , except for multiple fins/FinFETs. FIGS. 10Cand 10D are illustrated along the reference cross-section C-Cillustrated in FIG. 1 , except for multiple fins/FinFETs.

In FIG. 2 , a substrate 50 is provided. The substrate 50 may be asemiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. Thesubstrate 50 may be a wafer, such as a silicon wafer. Generally, an SOIsubstrate is a layer of a semiconductor material formed on an insulatorlayer. The insulator layer may be, for example, a buried oxide (BOX)layer, a silicon oxide layer, or the like. The insulator layer isprovided on a substrate, typically a silicon or glass substrate. Othersubstrates, such as a multi-layered or gradient substrate may also beused. In some embodiments, the semiconductor material of the substrate50 may include silicon; germanium; a compound semiconductor includingsilicon carbide, gallium arsenide, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductorincluding silicon-germanium, gallium arsenide phosphide, aluminum indiumarsenide, aluminum gallium arsenide, gallium indium arsenide, galliumindium phosphide, and/or gallium indium arsenide phosphide; orcombinations thereof.

In some embodiments, the substrate 50 has a region 50A and a region 50Badjacent the region 50A. The region 50A can be for forming a firstdevice and the region 50B can be for forming a second device. Each ofthe first device and the second device may be an NMOS transistor, suchas an n-type FinFET or a PMOS transistor, such as a p-type FinFET.

In FIG. 3 , fins 52A are formed in the region 50A of the substrate 50and fins 52B are formed in the region 50B of the substrate 50. The fins52A and 52B are semiconductor strips. In some embodiments, the fins 52Aand 52B may be formed in the substrate 50 by etching trenches in thesubstrate 50. The etching may be any acceptable etch process, such as areactive ion etch (RIE), neutral beam etch (NBE), a combination thereof,or the like. The etch process may be anisotropic.

The fins 52A and 52B may be patterned by any suitable method. Forexample, the fins 52A and 52B may be patterned using one or morephotolithography processes, including double-patterning ormulti-patterning processes. Generally, double-patterning ormulti-patterning processes combine photolithography and self-alignedprocesses, allowing patterns to be created that have, for example,pitches smaller than what is otherwise obtainable using a single, directphotolithography process. For example, in one embodiment, a sacrificiallayer is formed over a substrate and patterned using a photolithographyprocess. Spacers are formed alongside the patterned sacrificial layerusing a self-aligned process. The sacrificial layer is then removed, andthe remaining spacers may then be used to pattern the fins 52A and 52B.In some embodiments, the mask (or other layer) may remain on the fins52A and 52B.

In FIG. 4 , an insulation material 54 is formed over the substrate 50and between neighboring ones of the fins 52A and 52B. The insulationmaterial 54 may be an oxide, such as silicon oxide, a nitride, acombination thereof, or the like, and may be formed by a high densityplasma chemical vapor deposition (HDP-CVD), a flowable CVD (FCVD) (e.g.,a CVD-based material deposition in a remote plasma system and postcuring to make it convert to another material, such as an oxide), acombination thereof, or the like. Other insulation materials formed byany acceptable process may be also used. In the illustrated embodiment,the insulation material 54 is silicon oxide formed by a FCVD process. Ananneal process may be performed once the insulation material 54 isformed. In some embodiments, the insulation material 54 is formed suchthat excess insulation material 54 covers the fins 52A and 52B. Althoughthe insulation material 54 is illustrated as a single layer, someembodiments may utilize multiple layers. For example, in someembodiments, a liner (not shown) may first be formed along surfaces ofthe substrate 50 and the fins 52A and 52B. Thereafter, a fill material,such as those discussed above may be formed over the liner.

In FIG. 5 , a removal process is applied to the insulation material 54to remove excess insulation material 54 over the fins 52A and 52B. Insome embodiments, a planarization process such as a chemical mechanicalpolish (CMP) process, an etch-back process, combinations thereof, or thelike may be utilized. The planarization process exposes the fins 52A and52B such that top surfaces of the fins 52A and 52B and a top surface ofthe insulation material 54 are level after the planarization process iscompleted. In some embodiments in which a mask remains on the fins 52Aand 52B, the planarization process may expose the mask or remove themask such that a top surface of the mask or the top surfaces of the fins52A and 52B, respectively, and the top surface of the insulationmaterial 54 are level after the planarization process is completed.

In FIG. 6 , the insulation material 54 (see FIG. 5 ) is recessed to formshallow trench isolation (STI) regions 56. The insulation material 54 isrecessed such that upper portions of fins 52A and 52B protrude frombetween respective neighboring STI regions 56. Further, the top surfacesof the STI regions 56 may have a flat surface as illustrated, a convexsurface, a concave surface (such as dishing), or a combination thereof.The top surfaces of the STI regions 56 may be formed flat, convex,and/or concave by an appropriate etch. The STI regions 56 may berecessed using an acceptable etch process, such as one that is selectiveto the material of the insulation material 54 (e.g., etches the materialof the insulation material 54 at a faster rate than the material of thefins 52A and 52B). For example, a chemical oxide removal with a suitableetch process using, for example, dilute hydrofluoric (dHF) acid may beused.

The process described with respect to FIGS. 2 through 6 is just oneexample of how the fins may be formed. In some embodiments, the fins maybe formed by an epitaxial growth process. For example, a dielectriclayer can be formed over a top surface of the substrate 50, and trenchescan be etched through the dielectric layer to expose the underlyingsubstrate 50. Homoepitaxial structures can be epitaxially grown in thetrenches, and the dielectric layer can be recessed such that thehomoepitaxial structures protrude from the dielectric layer to formfins. Additionally, in some embodiments, heteroepitaxial structures canbe used for the fins. For example, the fins 52A and 52B in FIG. 5 can berecessed, and a material different from the fins 52A and 52B may beepitaxially grown over the recessed fins 52A and 52B. In suchembodiments, the fins comprise the recessed material as well as theepitaxially grown material disposed over the recessed material. In aneven further embodiment, a dielectric layer can be formed over a topsurface of the substrate 50, and trenches can be etched through thedielectric layer. Heteroepitaxial structures can then be epitaxiallygrown in the trenches using a material different from the substrate 50,and the dielectric layer can be recessed such that the heteroepitaxialstructures protrude from the dielectric layer to form the fins. In someembodiments where homoepitaxial or heteroepitaxial structures areepitaxially grown, the epitaxially grown materials may be in situ dopedduring growth, which may obviate prior and subsequent implantations,although in situ and implantation doping may be used together.

Still further, it may be advantageous to epitaxially grow a material inthe region 50A different from a material in the region 50B. In variousembodiments, upper portions of the fins 52A and 52B may be formed fromsilicon germanium (Si_(x)Ge_(1-x), where x can be in the range of 0 to1), silicon carbide, pure or substantially pure germanium, a III-Vcompound semiconductor, a II-VI compound semiconductor, or the like. Forexample, the available materials for forming III-V compoundsemiconductor include, but are not limited to, InAs, AlAs, GaAs, InP,GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, and the like.

Further in FIG. 6 , appropriate wells (not shown) may be formed in thefins 52A and 52B, and/or the substrate 50. In some embodiments, a P wellor an N well may be formed in each of the regions 50A and 50B dependingon a type of a semiconductor device to be formed in the regions 50A and50B. In some embodiments, appropriate wells may be formed in the region50A and 50B by using a photoresist or other masks (not shown). Forexample, a first photoresist may be formed over the regions 50A and 50Bof the substrate 50. The first photoresist is patterned to expose theregion 50A of the substrate 50, while the region 50B of the substrate 50is protected by a remaining portion of the first photoresist. The firstphotoresist may be formed using a spin-on technique and may be patternedusing acceptable photolithography techniques. Once the first photoresistis patterned, an n-type impurity implantation or a p-type impurityimplantation is performed in the region 50A, and the first photoresistmay act as a mask to substantially prevent impurities from beingimplanted into the region 50B. After the implantation, the firstphotoresist is removed, such as by an acceptable ashing process followedby a wet clean process.

Following the implantation of the region 50A, a second photoresist maybe formed over the regions 50A and 50B of the substrate 50. The secondphotoresist is patterned to expose the region 50B of the substrate 50,while the region 50A of the substrate 50 is protected by a remainingportion of the second photoresist. The second photoresist may be formedusing a spin-on technique and may be patterned using acceptablephotolithography techniques. Once the second photoresist is patterned,an n-type impurity implantation or a p-type impurity implantation isperformed in the region 50B, and the second photoresist may act as amask to substantially prevent impurities from being implanted into theregion 50A. After the implantation, the second photoresist is removed,such as by an acceptable ashing process followed by a wet clean process.

The n-type impurities may be phosphorus, arsenic, antimony, or the like,implanted in the regions 50A or 50B to a dose of equal to or less than10¹⁵ cm-², such as between about 10¹² cm-² and about 10¹⁵ cm⁻². In someembodiments, the n-type impurities may be implanted at an implantationenergy of about 1 keV to about 10 keV. The p-type impurities may beboron, BF₂, indium, or the like, implanted in the regions 50A and 50B toa dose of equal to or less than 10¹⁵ cm-², such as between about 10¹²cm⁻ ² and about 10¹⁵ cm⁻². In some embodiments, the p-type impuritiesmay be implanted at an implantation energy of about 1 keV to about 10keV. After performing the implantations of the region 50A and the region50B, an anneal process may be performed to activate the p-type and/orn-type impurities that were implanted. In some embodiments, the grownmaterials of epitaxial fins may be in situ doped during growth, whichmay obviate the implantations, although in situ and implantation dopingmay be used together.

In FIG. 7 , a dummy dielectric layer 60 is formed on the fins 52A and52B. The dummy dielectric layer 60 may be, for example, silicon oxide,silicon nitride, a combination thereof, or the like, and may bedeposited or thermally grown according to acceptable techniques. A dummygate layer 62 is formed over the dummy dielectric layer 60, and a masklayer 64 is formed over the dummy gate layer 62. The dummy gate layer 62may be deposited over the dummy dielectric layer 60 and then planarizedusing, for example, a CMP process. The mask layer 64 may be depositedover the dummy gate layer 62. The dummy gate layer 62 may be aconductive material and may be selected from a group including amorphoussilicon, polycrystalline-silicon (polysilicon), poly-crystallinesilicon-germanium (poly-SiGe), metallic nitrides, metallic silicides,metallic oxides, and metals. The dummy gate layer 62 may be deposited byphysical vapor deposition (PVD), CVD, sputter deposition, or othertechniques known and used in the art for depositing conductivematerials. The dummy gate layer 62 may be made of other materials thathave a high etching selectivity than materials of the STI regions 56.The mask layer 64 may include, for example, SiN, SiON, a combinationthereof, or the like. In the illustrated embodiment, a single dummy gatelayer 62 and a single mask layer 64 are formed across the region 50A andthe region 50B. In other embodiments, a first dummy gate layer formed inthe region 50A may be different from a second dummy gate layer formed inthe region 50B. It is noted that the dummy dielectric layer 60 is showncovering only the fins 52A and 52B for illustrative purposes only. Insome embodiments, the dummy dielectric layer 60 may be deposited suchthat the dummy dielectric layer 60 covers top surfaces of the STIregions 56, extending between the dummy gate layer 62 and the STIregions 56.

In FIGS. 8A and 8B, the mask layer 64 (see FIG. 7 ) may be patternedusing acceptable photolithography and etching techniques to form masks74. The pattern of the masks 74 then may be transferred to the dummygate layer 62 (see FIG. 7 ) to form dummy gates 72. In some embodiments,the pattern of the masks 74 may also be transferred to the dummydielectric layer 60 by an acceptable etching technique. The dummy gates72 cover channel regions 58A and 58B of the fins 52A and 52B,respectively. The pattern of the masks 74 may be used to physicallyseparate each of the dummy gates 72 from adjacent dummy gates. The dummygates 72 may also have a lengthwise direction substantiallyperpendicular to the lengthwise direction of respective one of the fins52A and 52B. As described below in greater detail, the dummy gates 72are sacrificial gates and are subsequently replaced by replacementgates. Accordingly, dummy gates 72 may also be referred to assacrificial gates. In other embodiments, some of the dummy gates 72 arenot replaced and remain in the final structure of the resulting FinFETdevice.

Further in FIGS. 8A and 8B, gate seal spacers 80 may be formed onexposed surfaces of the dummy gates 72, the masks 74, and/or the fins52A and 52B. A thermal oxidation or a deposition followed by ananisotropic etch may form the gate seal spacers 80. The gate sealspacers 80 may comprise silicon oxide, silicon nitride, SiCN, SiOC,SiOCN, a combination thereof, or the like. After the formation of thegate seal spacers 80, lightly doped source/drain (LDD) regions (notexplicitly illustrated) may be formed. In some embodiments when a p-typedevice is formed in the region 50A of the substrate 50, p-typeimpurities may be implanted into the exposed fins 52A in the region 50A.In some embodiments when an n-type device is formed in the region 50A ofthe substrate 50, n-type impurities may be implanted into the exposedfins 52A in the region 50A. In some embodiments when a p-type device isformed in the region 50B of the substrate 50, p-type impurities may beimplanted into the exposed fins 52B in the region 50B. In someembodiments when an n-type device is formed in the region 50B of thesubstrate 50, n-type impurities may be implanted into the exposed fins52B in the region 50B. The n-type impurities may be the any of then-type impurities previously discussed, and the p-type impurities may bethe any of the p-type impurities previously discussed. The lightly dopedsource/drain regions may have a dose of impurities of from about 10¹²cm-² to about 10¹⁶ cm⁻². In some embodiments, the n-type impurities orthe p-type impurities may be implanted at an implantation energy ofabout 1 keV to about 10 keV. An anneal may be used to activate theimplanted impurities.

In FIGS. 9A and 9B, gate spacers 86 are formed on the gate seal spacers80 along sidewalls of the dummy gates 72, the masks 74 and/or fins 52Aand 52B. The gate spacers 86 may be formed by conformally depositing aninsulating material and subsequently anisotropically etching theinsulating material. The insulating material of the gate spacers 86 maycomprise silicon oxide, silicon nitride, SiCN, SiOC, SiOCN, acombination thereof, or the like. In some embodiments, the gate spacers86 may comprise a plurality of layers (not shown), such that the layerscomprise different materials.

It is noted that the above disclosure generally describes a process offorming spacers and LDD regions. Other processes and sequences may beused. For example, fewer or additional spacers may be utilized,different sequence of steps may be utilized (e.g., the gate seal spacers80 may not be etched prior to forming the gate spacers 86, yielding“L-shaped” gate seal spacers, spacers may be formed and removed, and/orthe like). Furthermore, the n-type and p-type devices may be formedusing a different structures and steps. For example, LDD regions forn-type devices may be formed prior to forming the gate seal spacers 80while the LDD regions for p-type devices may be formed after forming thegate seal spacers 80.

In FIGS. 10A and 10B, epitaxial source/drain regions 82A and 82B areformed in the fins 52A and 52B, respectively, to exert stress in therespective ones of the channel regions 58A and 58B, thereby improvingdevice performance. The epitaxial source/drain regions 82A and 82B areformed in the fins 52A and 52B, respectively, such that each dummy gate72 is disposed between respective neighboring pairs of the epitaxialsource/drain regions 82A and 82B. In some embodiments, the epitaxialsource/drain regions 82A and 82B may extend into, and may also penetratethrough, the fins 52A and 52B, respectively. In some embodiments, thegate spacers 86 are used to separate the epitaxial source/drain regions82A and 82B from the dummy gates 72 by an appropriate lateral distanceso that the epitaxial source/drain regions 82A and 82B do not short outsubsequently formed gates of the resulting FinFET device.

The epitaxial source/drain regions 82A and 82B may be formed in theregions 50A and 50B, respectively, by etching source/drain regions ofthe fins 52A and 52B to form recesses in the fins 52A and 52B. Then, theepitaxial source/drain regions 82A and 82B are epitaxially grown in therespective recesses. In some embodiments when an n-type device is formedin the region 50A of the substrate 50, the epitaxial source/drainregions 82A may include any acceptable material, such as appropriate forn-type FinFETs. For example, if the fins 52A are formed of silicon, theepitaxial source/drain regions 82A may include materials exerting atensile strain in the channel region 58A, such as silicon, SiC, SiCP,SiP, a combination thereof, or the like. The epitaxial source/drainregions 82A may have surfaces raised from respective surfaces of thefins 52A and may have facets. In some embodiments when a p-type deviceis formed in the region 50A of the substrate 50, the epitaxialsource/drain regions 82A may include any acceptable material, such asappropriate for p-type FinFETs. For example, if the fins 52A are formedof silicon, the epitaxial source/drain regions 82A may comprisematerials exerting a compressive strain in the channel region 58A, suchas SiGe, SiGeB, Ge, GeSn, a combination thereof, or the like. Theepitaxial source/drain regions 82A may have surfaces raised fromrespective surfaces of the fins 52A and may have facets.

In some embodiments when an n-type device is formed in the region 50B ofthe substrate 50, the epitaxial source/drain regions 82B may include anyacceptable material, such as appropriate for n-type FinFETs. Forexample, if the fins 52B are formed of silicon, the epitaxialsource/drain regions 82B may include materials exerting a tensile strainin the channel region 58B, such as silicon, SiC, SiCP, SiP, acombination thereof, or the like. The epitaxial source/drain regions 82Bmay have surfaces raised from respective surfaces of the fins 52B andmay have facets. In some embodiments when a p-type device is formed inthe region 50B of the substrate 50, the epitaxial source/drain regions82B may include any acceptable material, such as appropriate for p-typeFinFETs. For example, if the fins 52B are formed of silicon, theepitaxial source/drain regions 82B may comprise materials exerting acompressive strain in the channel region 58B, such as SiGe, SiGeB, Ge,GeSn, a combination thereof, or the like. The epitaxial source/drainregions 82B may have surfaces raised from respective surfaces of thefins 52B and may have facets.

The epitaxial source/drain regions 82A and 82B and/or the fins 52A and52B may be implanted with dopants to form source/drain regions, similarto the process previously discussed for forming lightly-dopedsource/drain regions, followed by an anneal process. The source/drainregions 82A and 82B may have an impurity concentration of between about10 ¹⁹ cm-3 and about 10 ²¹ cm⁻³. The n-type and/or p-type impurities forsource/drain regions 82A and 82B may be any of the impurities previouslydiscussed. In some embodiments, the epitaxial source/drain regions 82Aand 82B may be in situ doped during growth.

As a result of the epitaxy processes used to form the epitaxialsource/drain regions 82A and 82B, upper surfaces of the epitaxialsource/drain regions have facets which expand laterally outward beyondsidewalls of the fins 52A and 52B, respectively. In some embodiments,these facets cause adjacent ones of the epitaxial source/drain regions82A of a device formed in the region 50A and adjacent ones of theepitaxial source/drain regions 82B of a device formed in the region 50Bto merge as illustrated by FIG. 10C. In other embodiments, adjacent onesof the epitaxial source/drain regions 82A and adjacent ones of theepitaxial source/drain regions 82B remain separated after the epitaxyprocess is completed as illustrated by FIG. 10D. In the embodimentsillustrated in FIGS. 10C and 10D, gate spacers 86 are formed covering aportion of the sidewalls of the fins 52A and 52B that extend above theSTI regions 56 thereby blocking the epitaxial growth. In some otherembodiments, the spacer etch used to form the gate spacers 86 may beadjusted to remove the spacer material to allow the epitaxially grownregion to extend to the surface of the STI region 56.

In FIGS. 11A and 11B, a first ILD 88 is deposited over the structureillustrated in FIGS. 10A and 10B. The first ILD 88 may be formed of adielectric material, and may be deposited by any suitable method, suchas CVD, plasma-enhanced CVD (PECVD), FCVD, a combination thereof, or thelike. Dielectric materials may include Phospho-Silicate Glass (PSG),Boro-Silicate Glass (BSG), Boron-Doped Phospho-Silicate Glass (BPSG),undoped Silicate Glass (USG), or the like. Other insulation materialsformed by any acceptable process may be also used. In some embodiments,a contact etch stop layer (CESL) 87 is disposed between the first ILD 88and the epitaxial source/drain regions 82A and 82B, the masks 74, andthe gate spacers 86. The CESL 87 may comprise a dielectric material,such as silicon nitride, silicon oxide, silicon oxynitride, acombination thereof, or the like, having a different etch rate than thematerial of the overlying first ILD 88.

In FIGS. 12A and 12B, a planarization process, such as a CMP process,may be performed to level the top surface of the first ILD 88 with thetop surfaces of the dummy gates 72 or the masks 74 (see FIGS. 11A and11B). The planarization process may also remove the masks 74 on thedummy gates 72, and portions of the gate seal spacers 80 and the gatespacers 86 along sidewalls of the masks 74. After the planarizationprocess, top surfaces of the dummy gates 72, the gate seal spacers 80,the gate spacers 86, and the first ILD 88 are level with each other.Accordingly, the top surfaces of the dummy gates 72 are exposed throughthe first ILD 88. In some embodiments, the masks 74 may remain, in whichcase the planarization process levels the top surface of the first ILD88 with the top surfaces of the masks 74 (see FIGS. 11A and 11B).

In FIGS. 13A and 13B, the dummy gates 72, and the masks 74, if present,are removed in an etching step(s), so that openings 90 are formed.Portions of the dummy dielectric layer 60 in the openings 90 may also beremoved. In some embodiments, only the dummy gates 72 are removed andthe dummy dielectric layer 60 remains and is exposed by the openings 90.In some embodiments, the dummy dielectric layer 60 is removed from theopenings 90 in a first region of a die (e.g., a core logic region) andremains in openings 90 in a second region of the die (e.g., aninput/output region). In some embodiments, the dummy gates 72 areremoved by an anisotropic dry etch process. For example, the etchingprocess may include a dry etch process using reaction gas(es) thatselectively etch the dummy gates 72 without etching the first ILD 88 orthe gate spacers 86. Each opening 90 exposes a channel region 58A (58B)of a respective fin 52A (52B). During the removal, the dummy dielectriclayer 60 may be used as an etch stop layer when the dummy gates 72 areetched. The dummy dielectric layer 60 may then be optionally removedafter the removal of the dummy gates 72.

In FIGS. 14A and 14B, gate stacks 95A and 95B are formed in the region50A and 50B of the substrate 50, respectively, within the opening 90.The gate stacks 95A and 95B may be also referred to as replacementgates. The gate stack 95A extends along sidewalls and top surfaces ofthe channel regions 58A of the fins 52A. The gate stack 95B extendsalong sidewalls and top surfaces of the channel regions 58B of the fins52B. In some embodiments, the gate stacks 95A and 95B may be formed asdescribed below with reference to FIGS. 17-22 and the detaileddescription is provided at that time. In other embodiments, the gatestacks 95A and 95B may be formed as described below with reference toFIGS. 23-29 and the detailed description is provided at that time. Inyet other embodiments, the gate stacks 95A and 95B may be formed asdescribed below with reference to FIGS. 30-37 and the detaileddescription is provided at that time.

In FIGS. 15A and 15B, a second ILD 108 is deposited over the first ILD88 and the gate stacks 95A and 95B. In some embodiment, the second ILD108 is a flowable film formed by a flowable CVD method. In someembodiments, the second ILD 108 is formed of a dielectric material suchas PSG, BSG, BPSG, USG, a combination thereof, or the like, and may bedeposited by any suitable method, such as CVD, PECVD, a combinationthereof, or the like. In some embodiments, the first ILD 88 and thesecond ILD 108 comprise a same material. In other embodiments, the firstILD 88 and the second ILD 108 comprise different materials. In someembodiments, before the formation of the second ILD 108, the gate stacks95A and 95B are recessed, so that recesses are formed directly over thegate stacks 95A and 95B and between opposing portions of the gatespacers 86. Gate masks 96 comprising one or more layers of dielectricmaterial, such as silicon nitride, silicon oxynitride, a combinationthereof, or the like, are filled in the recesses, followed by aplanarization process to remove excess portions of the dielectricmaterial extending over the first ILD 88. The subsequently formed gatecontacts 110A and 110B (see FIGS. 16A and 16B) penetrate through therespective gate mask 96 to contact the top surface of the respectiveones of the gate stacks 95A and 95B.

In FIGS. 16A and 16B, gate contacts 110A and 110B and source/draincontacts 112A and 112B are formed through the second ILD 108 and thefirst ILD 88 in the regions 50A and 50B, respectively, in accordancewith some embodiments. Openings for the source/drain contacts 112A and112B are formed through the first ILD 88 and the second ILD 108, andopenings for the gate contacts 110A and 110B are formed through thesecond ILD 108 and the gate masks 96. The openings may be formed usingacceptable photolithography and etching techniques. After forming theopenings for the source/drain contacts 112A and 112B, silicide layers114A and 114B, respectively, are formed through the openings for thesource/drain contacts 112A and 112B. In some embodiments, a metallicmaterial is deposited in the openings for the source/drain contacts 112Aand 112B. The metallic material may comprise Ti, Co, Ni, NiCo, Pt, NiPt,Ir, PtIr, Er, Yb, Pd, Rh, Nb, a combination thereof, or the like, andmay be formed using PVD, sputtering, a combination thereof, or the like.Subsequently, an annealing process is performed to form the silicidelayers 114A and 114B in the regions 50A and 50B, respectively. In someembodiments where the epitaxial source/drain regions 82A and 82Bcomprise silicon, the annealing process causes the metallic material toreact with silicon to form a silicide of the metallic material atinterfaces between the metallic material and the epitaxial source/drainregions 82A and 82B. After forming the silicide layers 114A and 114B,unreacted portions of the metallic material are removed using a suitableremoval process. Subsequently, a liner, such as a diffusion barrierlayer, an adhesion layer, or the like, and a conductive material areformed in the openings for the source/drain contacts 112A and 112B, andin the openings for the gate contacts 110A and 110B. The liner mayinclude titanium, titanium nitride, tantalum, tantalum nitride, acombination thereof, or the like. The conductive material may be copper,a copper alloy, silver, gold, tungsten, cobalt, aluminum, nickel, acombination thereof, or the like. A planarization process, such as a CMPprocess, may be performed to remove excess material from a surface ofthe second ILD 108. The remaining portions of the liner and theconductive material in the openings form the source/drain contacts 112Aand 112B, and the gate contacts 110A and 110B. The source/drain contacts112A and 112B are physically and electrically coupled to the epitaxialsource/drain regions 82A and 82B, respectively. The gate contacts 110Aand 110B are physically and electrically coupled to the gate stacks 95Aand 95B, respectively. The source/drain contacts 112A and 112B, and thegate contacts 110A and 110B may be formed in different processes, or maybe formed in the same process. Although shown as being formed in thesame cross-sections, it should be appreciated that each of thesource/drain contacts 112A and 112B and the gate contacts 110A and 110Bmay be formed in different cross-sections, which may avoid shorting ofthe contacts.

FIGS. 17-22 are cross-sectional views of intermediate stages in themanufacturing of a gate structure including the gate stacks 95A and 95Billustrated in FIGS. 14A and 14B, in accordance with some embodiments.In particular, FIGS. 17-22 illustrate detailed views of a region 89 ofFIG. 14A as the gate stacks 95A and 95B are formed in the opening 90. InFIG. 17 , interfacial layers 115A and 115B are formed in the opening 90in the regions 50A and 50B, respectively. In some embodiments, each ofthe interfacial layers 115A and 115B may comprise a dielectric materialsuch as silicon oxide, silicon oxynitride, silicon hydroxide, silicongermanium oxide, germanium oxide, a combination thereof, or the like,and may formed using thermal oxidation, chemical oxidation, ALD, CVD, acombination thereof, or the like. In some embodiments, the interfaciallayer 115A and the interfacial layer 115B comprise a same dielectricmaterial. In such embodiments, the interfacial layers 115A and 115B maybe formed by depositing a dielectric material in the opening 90 in boththe region 50A and the region 50B. In other embodiments, the interfaciallayer 115A and the interfacial layer 115B may comprise differentdielectric materials. In some embodiments, the interfacial layer 115Aand the interfacial layer 115B comprise different dielectric materialsformed by chemical oxidation or thermal oxidation of the materials ofthe fins 52A and 52B, respectively. In other embodiments when theinterfacial layer 115A and the interfacial layer 115B comprise differentdielectric materials, a method for forming the interfacial layer 115Aand the interfacial layer 115B may include depositing a first dielectricmaterial in the opening 90 in both the region 50A and the region 50B,removing a portion of the first dielectric layer in the region 50B usingsuitable photolithography and etching processes, depositing a seconddielectric material in the opening 90 in both the region 50A and theregion 50B, and removing a portion of the second dielectric layer in theregion 50A using suitable photolithography and etching processes. Inthis example, the interfacial layer 115A is formed before forming theinterfacial layer 115B. Alternatively, the interfacial layer 115A may beformed after forming the interfacial layer 115B. In some embodiments,the interfacial layer 115A has a thickness between about 5 Å and about150 Å. In some embodiments, the interfacial layer 115B has a thicknessbetween about 5 Å and about 150 Å.

After forming the interfacial layer 115A and the interfacial layer 115B,a gate dielectric layer 116A and a gate dielectric layer 116B are formedin the opening 90 in the regions 50A and 50B, respectively. The gatedielectric layer 116A and the gate dielectric layer 116B are formed overthe interfacial layer 115A and the interfacial layer 115B, respectively.In some embodiments, each of the gate dielectric layers 116A and 116Bmay comprise silicon oxide, silicon nitride, multilayers thereof, or thelike. In some embodiments, each of the gate dielectric layers 116A and116B may comprise a high-k dielectric material, and in theseembodiments, the gate dielectric layers 116A and 116B may have a k valuegreater than about 7.0, and may include a metal oxide or a silicate ofHf, Al, Zr, La, Mg, Ba, Ti, Pb, Y, Sc, combinations thereof, or thelike. The formation methods of the gate dielectric layers 116A and 116Bmay include Molecular-Beam Deposition (MBD), ALD, PECVD, a combinationthereof, or the like. In some embodiments, the gate dielectric layer116A and the gate dielectric layer 116B may comprise a same dielectricmaterial. In such embodiments, the gate dielectric layers 116A and 116Bmay be formed by depositing a dielectric material in the opening 90 inboth the region 50A and the region 50B, such that a first portion of thedielectric material in the region 50A forms the gate dielectric layer116A and a second portion of the dielectric material in the region 50Bforms the gate dielectric layer 116B. In other embodiments, the gatedielectric layer 116A and the gate dielectric layer 116B may comprisedifferent dielectric materials. In such embodiments, a method forforming the gate dielectric layer 116A and the gate dielectric layer116B may include depositing a first dielectric material in the opening90 in both the region 50A and the region 50B, removing a portion of thefirst dielectric layer in the region 50B using suitable photolithographyand etching processes, depositing a second dielectric material in theopening 90 in both the region 50A and the region 50B, and removing aportion of the second dielectric layer in the region 50A using suitablephotolithography and etching processes. In this example, the gatedielectric layer 116A is formed before forming the gate dielectric layer116B. Alternatively, the gate dielectric layer 116A may be formed afterforming the gate dielectric layer 116B. In some embodiments, the gatedielectric layer 116A has a thickness between about 8 Å and about 300 Å.In some embodiments, the gate dielectric layer 116B has a thicknessbetween about 8 Å and about 300 Å.

After forming the gate dielectric layer 116A and the gate dielectriclayer 116B, a work function layer 118 is formed in the opening 90 overthe gate dielectric layer 116A in the region 50A. In some embodiments,the work function layer 118 may be a p-type work function layer. Thep-type work function layer may comprise TiN, WN, WCN, TaN, Ru, Co, W,combinations thereof, multi-layers thereof, or the like, and may beformed using PVD, CVD, ALD, a combination thereof, or the like. In suchembodiments, a method for forming the work function layer 118 mayinclude blanket depositing a suitable material in the opening 90 in boththe region 50A and the region 50B, and removing a portion of thesuitable material in the region 50B using suitable photolithography andetching processes. In some embodiments, the work function layer 118 hasa thickness between about 5 Å and about 400 Å.

In FIG. 18 , after forming the work function layer 118, a barrier layer120 is blanket deposited in the opening 90 in both the region 50A andthe region 50B. In some embodiments, the barrier layer 120 may compriseTaN, TiN, TaTiN, AIN, Al₂O₃, HfO2, ZrO2, Si, Ti, V, combinationsthereof, multi-layers thereof, or the like, and may be formed using ALD,CVD, PEALD a combination thereof, or the like. In some embodiments, thebarrier layer 120 has a thickness between about 5 Å and about 250 Å.

In FIG. 19 , after forming the barrier layer 120, a treatment process isperformed on the barrier layer 120 to form a treated portion 126 of thebarrier layer 120. In some embodiments, the treatment process convertsas-deposited material of the barrier layer 120 to another materialdifferent from the as-deposited material, such that the treated portion126 of the barrier layer 120 comprises the converted as-depositedmaterial. In some embodiments, the treated portion 126 of the barrierlayer 120 has a higher etch rate than an un-treated portion of thebarrier layer 120. In some embodiments, a ratio of an etch rate of thetreated portion 126 of the barrier layer 120 to an etch rate of theun-treated portion of the barrier layer 120 is between about 1.8 andabout 50. In some embodiments, the treatment process comprises anoxidation process, a fluorination process, a nitridation process, achlorination process, or the like. In some embodiments, the oxidationprocess may comprise a treatment with a suitable oxygen-containingchemical, an oxygen implantation process, a combination thereof, or thelike. In some embodiments, the fluorination process may comprise atreatment with a suitable fluorine-containing chemical, a fluorineimplantation process, a combination thereof, or the like. In someembodiments, the nitridation process may comprise a treatment with asuitable nitrogen-containing chemical, a nitrogen implantation process,a combination thereof, or the like. In some embodiments, thechlorination process may comprise a treatment with a suitablechlorine-containing chemical, a chlorine implantation process, acombination thereof, or the like. In some embodiments when the treatmentprocess is an implantation process, the implantation process may befollowed by an anneal process. In some embodiments, a direction of ions(illustrated by arrows 124 in FIG. 19 ) of the implantation processforms an angle θ with a direction that is perpendicular to a majorsurface of the substrate 50. In some embodiments, the angle θ is betweenabout 5 degrees to about 22 degrees. In some embodiments, energy of ionsof the implantation process (implantation energy) is between about 100eV and about 6 KeV. In some embodiments, an implantation dose is betweenabout 10¹² cm⁻² to about 5×10¹⁸ cm⁻². In some embodiments, the angle θand/or some other parameters of implantation process may be adjustedsuch that a portion of the barrier layer 120 formed on sidewall of thework function layer 118 at an interface between the region 50A and theregion 50B remains untreated after completing the implantation process.

In some embodiments when the barrier layer 120 comprises TaN, TiN,TaTiN, combinations thereof, multi-layers thereof, or the like, thetreatment process comprises an oxidation process. In some embodimentswhen the barrier layer 120 is formed of TiN, TiN is converted totitanium oxide (such as TiO₂) or titanium oxynitride, such that thetreated portion 126 of the barrier layer 120 comprises titanium oxide(such as TiO₂,) or titanium oxynitride, while the un-treated portion ofthe barrier layer 120 remains to be formed of TiN. In some embodimentwhen the barrier layer 120 is formed of TaN, TaN is converted totantalum oxide (such as TaO2, or Ta₂O₅) or tantalum oxynitride, suchthat the treated portion 126 of the barrier layer 120 comprises tantalumoxide (such as TaO₂, or Ta₂O₅) or tantalum oxynitride, while theun-treated portion of the barrier layer 120 remains to be formed of TaN.In some embodiment when the barrier layer 120 is formed of TaTiN, TaTiNis converted to TaTiO such that the treated portion 126 of the barrierlayer 120 comprises TaTiO, while the un-treated portion of the barrierlayer 120 remains to be formed of TaTiN.

In some embodiment when the barrier layer 120 comprises AlN, Al₂O₃,HfO₂, ZrO₂, combinations thereof, multi-layers thereof, or the like, thetreatment process comprises a fluorination process. In some embodimentwhen the barrier layer 120 is formed of Al₂O₃, Al₂O₃ is converted toAlF₃ such that the treated portion 126 of the barrier layer 120comprises AlF₃, while the un-treated portion of the barrier layer 120remains to be formed of Al₂O₃. In some embodiment when the barrier layer120 is formed of AlN, AlN is converted to AlF₃ such that the treatedportion 126 of the barrier layer 120 comprises AlF₃, while theun-treated portion of the barrier layer 120 remains to be formed of AlN.In some embodiment when the barrier layer 120 is formed of HfO₂, HfO₂ isconverted to HfF₄ such that the treated portion 126 of the barrier layer120 comprises HfF₄, while the un-treated portion of the barrier layer120 remains to be formed of HfO₂. In some embodiment when the barrierlayer 120 is formed of ZrO2, ZrO₂ is converted to ZrF₄ such that thetreated portion 126 of the barrier layer 120 comprises ZrF₄, while theun-treated portion of the barrier layer 120 remains to be formed ofZrO₂.

In some embodiments when the barrier layer 120 comprises Si, thetreatment process may comprise an oxidation process, a nitridationprocess, a chlorination process, or the like. In some embodiments whenthe treatment process comprises an oxidation process, Si is converted tosilicon oxide (SiO₂) such that the treated portion 126 of the barrierlayer 120 comprises silicon oxide (SiO₂), while the un-treated portionof the barrier layer 120 remains to be formed of Si. In some embodimentswhen the treatment process comprises a nitridation process, Si isconverted to silicon nitride (Si₃N₄) such that the treated portion 126of the barrier layer 120 comprises silicon nitride (Si₃N₄), while theun-treated portion of the barrier layer 120 remains to be formed of Si.In some embodiments when treatment process comprises a chlorinationprocess, Si is converted to silicon chloride (SiCl_(x)) such that thetreated portion 126 of the barrier layer 120 comprises silicon chloride(SiCl_(x)), while the un-treated portion of the barrier layer 120remains to be formed of Si.

In some embodiment when the barrier layer 120 comprises Ti and V, thetreatment process comprises an oxidation process. In some embodimentswhen the barrier layer 120 comprises Ti, Ti is converted to titaniumoxide (TiO₂) such that the treated portion 126 of the barrier layer 120comprises titanium oxide (TiO₂), while the un-treated portion of thebarrier layer 120 remains to be formed of Ti. In some embodiments whenthe barrier layer 120 comprises V, V is converted to vanadium oxide(V₂O₅) such that the treated portion 126 of the barrier layer 120comprises vanadium oxide (V₂O₅), while the un-treated portion of thebarrier layer 120 remains to be formed of V.

In FIG. 20 , the treated portion 126 (see FIG. 19 ) of the barrier layer120 is removed, while the un-treated portion of the barrier layer 120remains at the metal boundary region (at the interface between theregion 50A and 50B) along the sidewall of the work function layer 118.In some embodiments, the treated portion 126 (see FIG. 19 ) of thebarrier layer 120 may be removed using a selective etch process. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 19and parameters of the selective etch process (such as, for example,etchant composition and etch duration) are tuned, such that a topsurface of the remaining portion of the barrier layer 120 and a topsurface of the work function layer 118 are substantially level withinprocess variations. In other embodiments, a residue of the barrier layer120 may remain on the top surface of the work function layer 118.

In some embodiments when the barrier layer 120 comprises TaN, TiN, andTaTiN, and the treatment comprises an oxidation process, the treatedportion 126 (see FIG. 19 ) of the barrier layer 120 is selectivelyetched using etchants such as WF₆, TaF₅, TiF₄, WCl₅, TaCl₅, TiCl₄, NF₃,CF₄, HF, a combination thereof, or the like. In such embodiments, aratio of an etch rate of the treated portion 126 of the barrier layer120 to an etch rate of the un-treated portion of the barrier layer 120is between about 1.8 and about 50.

In some embodiments when the barrier layer 120 comprises AlN, Al₂O₃, andHfO₂, and the treatment comprises a fluorination process, the treatedportion 126 (see FIG. 19 ) of the barrier layer 120 is selectivelyetched using etchants such as trimethylaluminum (TMA), Sn(acac)₂,Al(CH₃)₂Cl, SiCl₄, a combination thereof, or the like. In suchembodiments, a ratio of an etch rate of the treated portion 126 of thebarrier layer 120 to an etch rate of the un-treated portion of thebarrier layer 120 is between about 4 and about 50.

In some embodiments when the barrier layer 120 comprises ZrO2 and thetreatment comprises a fluorination process, the treated portion 126 (seeFIG. 19 ) of the barrier layer 120 is selectively etched using etchantssuch as Sn(acac)₂, or the like. In such embodiments, a ratio of an etchrate of the treated portion 126 of the barrier layer 120 to an etch rateof the un-treated portion of the barrier layer 120 is between about 4and about 50.

In some embodiments when the barrier layer 120 comprises Si and thetreatment comprises an oxidation process or a nitridation process, thetreated portion 126 (see FIG. 19 ) of the barrier layer 120 isselectively etched using etchants such as C₂F₆, CF₄, a combinationthereof, or the like. In such embodiments, a ratio of an etch rate ofthe treated portion 126 of the barrier layer 120 to an etch rate of theun-treated portion of the barrier layer 120 is between about 2 and about40.

In some embodiments when the barrier layer 120 comprises Si and thetreatment comprises a chlorination process, the treated portion 126 (seeFIG. 19 ) of the barrier layer 120 is selectively etched using Arplasma, or the like. In such embodiments, a ratio of an etch rate of thetreated portion 126 of the barrier layer 120 to an etch rate of theun-treated portion of the barrier layer 120 is between about 1.8 andabout 50.

In some embodiments when the barrier layer 120 comprises Ti and V, andthe treatment comprises an oxidation process, the treated portion 126(see FIG. 19 ) of the barrier layer 120 is selectively etched usingetchants such as C₂F₆, CF₄, a combination thereof, or the like. In suchembodiments, a ratio of an etch rate of the treated portion 126 of thebarrier layer 120 to an etch rate of the un-treated portion of thebarrier layer 120 is between about 2 and about 40.

Referring further to FIG. 20 , in some embodiments, the remainingportion of the barrier layer 120 on the sidewall of the work functionlayer 118 may be formed by blanket depositing the barrier layer 120 asdescribed above with reference to FIG. 18 and removing horizontal andsloped portions of the barrier layer 120. In some embodiments, thehorizontal and sloped portions of the barrier layer 120 may be removedusing a suitable anisotropic etch process. In such embodiments, thetreatment process described above with reference to FIG. 19 is omitted.In some embodiments, parameters of the anisotropic etch process (suchas, for example, etchant composition and etch duration) are tuned, suchthat the top surface of the remaining portion of the barrier layer 120and the top surface of the work function layer 118 are substantiallylevel within process variations.

In FIG. 21 , after removing the treated portion 126 (see FIG. 19 ) ofthe barrier layer 120, a work function layer 128 is blanket deposited inthe opening 90 in both the region 50A and the region 50B. In someembodiments, the work function layer 128 may be an n-type work functionlayer. The n-type work function layer may comprise Ti, Ag, Al, TiAl,TiAIN, TiAlC, TaAl, TaC, TaCN, TaSiN, TaAlC, Mn, Zr, combinationsthereof, multi-layers thereof, or the like, and may be formed using PVD,CVD, ALD, a combination thereof, or the like. In some embodiments, thework function layer 128 has a thickness between about 8 Å and about 400Å.

In FIG. 22 , after forming the work function layer 128, a shield layer130A and a shield layer 130B are formed in the opening 90 in the regions50A and 50B, respectively. In some embodiments, each of the shield layer130A and the shield layer 130B may comprise TiN, Si, SiN, TiSiN,combinations thereof, multi-layers thereof, or the like, and may beformed using PVD, CVD, ALD, a combination thereof, or the like. In someembodiments, the shield layer 130A and the shield layer 130B comprise asame material. In such embodiments, the shield layers 130A and 130B maybe formed by depositing a suitable material in the opening 90 in boththe region 50A and the region 50B. In other embodiments, the shieldlayer 130A and the shield layer 130B may comprise different materials.In such embodiments, a method for forming the shield layer 130A and theshield layer 130B may include depositing a first material in the opening90 in both the region 50A and the region 50B, removing a portion of thefirst material in the region 50B using suitable photolithography andetching processes, depositing a second material in the opening 90 inboth the region 50A and the region 50B, and removing a portion of thesecond material in the region 50A using suitable photolithography andetching processes. In this example, the shield layer 130A is formedbefore forming the shield layer 130B. Alternatively, the shield layer130A may be formed after forming the shield layer 130B. In someembodiments, the shield layer 130A has a thickness between about 5 Å andabout 60 Å. In some embodiments, the shield layer 130B has a thicknessbetween about 5 Å and about 60 Å.

After forming shield layers 130A and 130B, a glue layer 132A and a gluelayer 132B are formed in the opening 90 in the regions 50A and 50B,respectively. In some embodiments, each of the glue layer 132A and theglue layer 132B may comprise TiN, Ti, Co, combinations thereof,multi-layers thereof, or the like, and may be formed using PVD, CVD,ALD, a combination thereof, or the like. In some embodiments, the gluelayer 132A and the glue layer 132B comprise a same material. In suchembodiments, the glue layers 132A and 132B may be formed by depositing asuitable material in the opening 90 in both the region 50A and theregion 50B. In other embodiments, the glue layer 132A and the glue layer132B may comprise different materials. In such embodiments, a method forforming the glue layer 132A and the glue layer 132B may includedepositing a first material in the opening 90 in both the region 50A andthe region 50B, removing a portion of the first material in the region50B using suitable photolithography and etching processes, depositing asecond material in the opening 90 in both the region 50A and the region50B, and removing a portion of the second material in the region 50Ausing suitable photolithography and etching processes. In this example,the glue layer 132A is formed before forming the glue layer 132B.Alternatively, the glue layer 132A may be formed after forming the gluelayer 132B. In some embodiments, the glue layer 132A has a thicknessbetween about 5 Å and about 60 Å. In some embodiments, the glue layer132B has a thickness between about 5 Å and about 60 Å.

Further in FIG. 22 , after forming glue layers 132A and 132B, aconductive fill material 134A and a conductive fill material 134B areformed in the opening 90 in the regions 50A and 50B, respectively. Insome embodiments, each of the conductive fill material 134A and the fillmaterial 134B may comprise Co, Ru, Al, Ag, Au, W, fluorinated-W, Ni, Ti,Cu, Mn, Pd, Re, Ir, Pt, Zr, alloys thereof, combinations thereof,multi-layers thereof, or the like, and may be formed using PVD, CVD,ALD, plating, a combination thereof, or the like. In some embodiments,the conductive fill material 134A and the conductive fill material 134Bcomprise a same conductive material. In such embodiments, the conductivefill materials 134A and 134B may be formed by depositing a conductivematerial in the opening 90 in both the region 50A and the region 50B. Inother embodiments, the conductive fill material 134A and the conductivefill material 134B may comprise different conductive materials. In suchembodiments, a method for forming the conductive fill material 134A andthe conductive fill material 134B may include depositing a firstconductive material in the opening 90 in both the region 50A and theregion 50B, removing a portion of the first conductive material in theregion 50B using suitable photolithography and etching processes,depositing a second conductive material in the opening 90 in both theregion 50A and the region 50B, and removing a portion of the secondconductive material in the region 50A using suitable photolithographyand etching processes. In this example, the conductive fill material134A is formed before forming the conductive fill material 134B.Alternatively, the conductive fill material 134A may be formed afterforming the conductive fill material 134B.

After forming the conductive fill materials 134A and 134B, aplanarization process, such as a CMP process, may be performed to removeexcess portions of the layers 115A, 115B, 116A, 116B, 118, 128, 130A,130B, 132A, 132B, 134A and 134B, which excess portions are over the topsurface of the first ILD 88 (see FIG. 14B). The remaining portions ofthe interfacial layer 115A, the gate dielectric layer 116A, the workfunction layers 118 and 128, the shield layer 130A, the glue layer 132A,and the conductive fill material 134A form the replacement gates stack95A (see FIGS. 14A and 14B) in the region 50A. The remaining portions ofthe interfacial layer 115B, the gate dielectric layer 116B, the workfunction layer 128, the shield layer 130B, the glue layer 132B, and theconductive fill material 134B form the replacement gates stack 95B (seeFIGS. 14A and 14B) in the region 50B.

In some embodiments, the barrier layer 120 formed on the sidewall of thework function layer 118 prevents or reduces metal diffusion from thework function layer 128 to the work function layer 118. For example,when the work function layer 128 comprises TiAl, TiAIN, TiAlC, TaAl, orTaAlC, the barrier layer 120 prevents or reduces Al diffusion from thework function layer 128 to the work function layer 118. Furthermore, thebarrier layer 120 isolates the gate stack 95A from the gate stack 95Band prevents or reduces a threshold voltage shift due to the metaldiffusion.

FIG. 23 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 23 is similar to the gate structure of FIG. 22 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 23 may be formed using processsteps similar to the process steps described above with reference toFIGS. 17-22 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 19and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 20 are tuned, such that corners of theremaining portion of the barrier layer 120 are rounded. In someembodiments, an implantation angle of the treatment process may beincreased. In some embodiments, implantation energy of the treatmentprocess may be increased. In some embodiments, a duration of theselective etch process may be increased. In some embodiments, etchselectively between the treated and un-treated portions of the barrierlayer 120 may be decreased. In other embodiments where the remainingportion of the barrier layer 120 is formed using a blanket depositionprocess followed by an anisotropic etch process, parameters of theanisotropic etch process (such as, for example, etchant composition andetch duration) are tuned, such that corners of the remaining portion ofthe barrier layer 120 are rounded.

FIG. 24 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 24 is similar to the gate structure of FIG. 22 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 24 may be formed using processsteps similar to the process steps described above with reference toFIGS. 17-22 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 19and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 20 are tuned, such that a top surface ofthe remaining portion of the barrier layer 120 is lower than a topsurface of the work function layer 118. In some embodiments,implantation energy of the treatment process may be increased. In someembodiments, a duration of the selective etch process may be increased.In other embodiments where the remaining portion of the barrier layer120 is formed using a blanket deposition process followed by ananisotropic etch process, parameters of the anisotropic etch process(such as, for example, etchant composition and etch duration) are tuned,such that a top surface of the remaining portion of the barrier layer120 is lower than a top surface of the work function layer 118. In someembodiments, the top surface of the remaining portion of the barrierlayer 120 is lower than the top surface of the work function layer 118by a distance D₁. In some embodiments, the distance D₁ is between about3 Å and about 55 Å.

FIG. 25 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 25 is similar to the gate structure of FIG. 22 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 25 may be formed using processsteps similar to the process steps described above with reference toFIGS. 17-22 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 19and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 20 are tuned, such that corners of theremaining portion of the barrier layer 120 are rounded and such that atop surface of the remaining portion of the barrier layer 120 is lowerthan a top surface of the work function layer 118. In some embodiments,an implantation angle of the treatment process may be increased. In someembodiments, implantation energy of the treatment process may beincreased. In some embodiments, a duration of the selective etch processmay be increased. In some embodiments, etch selectively between thetreated and un-treated portions of the barrier layer 120 may bedecreased. In other embodiments where the remaining portion of thebarrier layer 120 is formed using a blanket deposition process followedby an anisotropic etch process, parameters of the anisotropic etchprocess (such as, for example, etchant composition and etch duration)are tuned, such that corners of the remaining portion of the barrierlayer 120 are rounded and such that a top surface of the remainingportion of the barrier layer 120 is lower than a top surface of the workfunction layer 118. In some embodiments, the top surface of theremaining portion of the barrier layer 120 is lower than the top surfaceof the work function layer 118 by a distance D₂. In some embodiments,the distance D₂ is between about 3 Å and about 55 Å.

FIGS. 26-32 are cross-sectional views of intermediate stages in themanufacturing of a gate structure including the gate stacks 95A and 95Billustrated in FIGS. 14A and 14B, in accordance with some embodiments.In particular, FIGS. 26-32 illustrate detailed views of a region 89 ofFIG. 14A as the gate stacks 95A and 95B are formed in the opening 90. Insome embodiments, process steps described in FIGS. 26-32 are similar tothe process steps described above with reference to FIGS. 17-22 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein.

In FIG. 26 , interfacial layers 115A and 115B are formed in the opening90 in the regions 50A and 50B, respectively as described above withreference to FIG. 17 and the description is not repeated herein. Afterforming the interfacial layers 115A and 115B, a gate dielectric layer116A and a gate dielectric layer 116B are formed in the opening in theregions 50A and 50B, respectively, as described above with reference toFIG. 17 and the description is not repeated herein. After forming thegate dielectric layers 116A and 116B, a work function layer 118 isformed over the gate dielectric layer 116A in the region 50A asdescribed above with reference to FIG. 17 and the description is notrepeated herein.

In FIG. 27 , after forming the work function layer 118, a work functionlayer 136 is blanket deposited in the opening 90 in both the region 50Aand the region 50B. In some embodiments, the work function layer 136 maybe formed using similar materials and method as the work function layer118 described above with reference to FIG. 17 and the description is notrepeated herein. In some embodiments, the work function layer 118 andthe work function layer 136 comprise a same material. In otherembodiments, the work function layer 118 and the work function layer 136comprise different materials. In some embodiments, the work functionlayer 136 has a thickness between about 5 Å and about 400 Å.

In FIG. 28 , after forming the work function layer 136, a barrier layer120 is blanket deposited in the opening 90 in both the region 50A andthe region 50B as described above with reference to FIG. 18 and thedescription is not repeated herein.

In FIG. 29 , after forming the barrier layer 120, a treatment process isperformed on the barrier layer 120 to form a treated portion 126 of thebarrier layer 120 as described above with reference to FIG. 19 and thedescription is not repeated herein. After completing the treatmentprocess, a portion of the barrier layer 120 disposed on a sidewall ofthe work function layer 136 at an interface between the region 50A andthe region 50B remains untreated.

In FIG. 30 , the treated portion 126 (see FIG. 29 ) of the barrier layer120 is removed as described above with reference to FIG. 20 anddescription is not repeated herein. After completing the removalprocess, the un-treated portion of the barrier layer 120 remains alongthe sidewall of the work function layer 136 at an interface between theregion 50A and the region 50B. In some embodiments, parameters of thetreatment process (such as, for example, implantation angle and energy)described above with reference to FIG. 29 and parameters of theselective etch process (such as, for example, etchant composition, etchduration, and etch selectivity) are tuned, such that a top surface ofthe remaining portion of the barrier layer 120 and a top surface of thework function layer 136 are substantially level within processvariations.

In other embodiments, the remaining portion of the barrier layer 120 onthe sidewall of the work function layer 136 may be formed by blanketdepositing the barrier layer 120 as described above with reference toFIG. 28 and removing horizontal and sloped portions of the barrier layer120. In some embodiments, the horizontal and sloped portions of thebarrier layer 120 may be removed using a suitable anisotropic etchprocess. In such embodiments, the treatment process described above withreference to FIG. 29 is omitted. In some embodiments, parameters of theanisotropic etch process (such as, for example, etchant composition andetch duration) are tuned, such that the top surface of the remainingportion of the barrier layer 120 and the top surface of the workfunction layer 136 are substantially level within process variations.

In FIG. 31 , after forming the barrier layer 120 on the sidewall of thework function layer 136, a work function layer 128 is blanket depositedin the opening 90 in both the region 50A and the region 50B as describedabove with reference to FIG. 21 and the description is not repeatedherein.

In FIG. 32 , after forming the work function layer 128, a shield layer130A and a shield layer 130B are formed in the opening 90 in the regions50A and 50B, respectively, as described above with reference to FIG. 22and the description is not repeated herein. After forming the shieldlayers 130A and 130B, a glue layer 132A and a glue layer 132B are formedin the opening 90 in the regions 50A and 50B, respectively, as describedabove with reference to FIG. 22 and the description is not repeatedherein. After forming the glue layers 132A and 132B, a conductive fillmaterial 134A and a conductive fill material 134B are formed in theopening 90 in the regions 50A and 50B, respectively, as described abovewith reference to FIG. 22 and the description is not repeated herein.

After forming the conductive fill materials 134A and 134B, aplanarization process, such as a CMP process, may be performed to removeexcess portions of the layers 115A, 115B, 116A, 116B, 118, 136, 128,130A, 130B, 132A, 132B, 134A and 134B, which excess portions are overthe top surface of the first ILD 88 (see FIG. 14B). The remainingportions of the interfacial layer 115A, the gate dielectric layer 116A,the work function layers 118, 128 and 136, the shield layer 130A, theglue layer 132A, and the conductive fill material 134A form thereplacement gates stack 95A in the region 50A. The remaining portions ofthe interfacial layer 115B, the gate dielectric layer 116B, the workfunction layers 128 and 136, the shield layer 130B, the glue layer 132B,and the conductive fill material 134B form the replacement gates stack95B in the region 50B.

In some embodiments, the barrier layer 120 formed on the sidewall of thework function layer 136 prevents or reduces metal diffusion from thework function layer 128 to the work function layer 136. For example,when the work function layer 128 comprises TiAl, TiAIN, TiAlC, TaAl orTaAlC, the barrier layer 120 prevents or reduces Al diffusion from thework function layer 128 to the work function layer 136. Furthermore, thebarrier layer 120 isolates the gate stack 95A from the gate stack 95Band prevents or reduces a threshold voltage shift due to the metaldiffusion.

FIG. 33 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 33 is similar to the gate structure of FIG. 32 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 32 may be formed using processsteps similar to the process steps described above with reference toFIGS. 26-32 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 29and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 30 are tuned, such that corners of theremaining portion of the barrier layer 120 are rounded. In someembodiments, an implantation angle of the treatment process may beincreased. In some embodiments, implantation energy of the treatmentprocess may be increased. In some embodiments, a duration of theselective etch process may be increased. In some embodiments, etchselectively between the treated and un-treated portions of the barrierlayer 120 may be decreased. In other embodiments where the remainingportion of the barrier layer 120 is formed using a blanket depositionprocess followed by an anisotropic etch process, parameters of theanisotropic etch process (such as, for example, etchant composition andetch duration) are tuned, such that corners of the remaining portion ofthe barrier layer 120 are rounded.

FIG. 34 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 34 is similar to the gate structure of FIG. 32 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 34 may be formed using processsteps similar to the process steps described above with reference toFIGS. 26-32 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 29and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 30 are tuned, such that a top surface ofthe remaining portion of the barrier layer 120 is lower than a topsurface of the work function layer 136. In some embodiments,implantation energy of the treatment process may be increased. In someembodiments, a duration of the selective etch process may be increased.In other embodiments where the remaining portion of the barrier layer120 is formed using a blanket deposition process followed by ananisotropic etch process, parameters of the anisotropic etch process(such as, for example, etchant composition and etch duration) are tuned,such that the top surface of the remaining portion of the barrier layer120 is lower than the top surface of the work function layer 136. Insome embodiments, the top surface of the remaining portion of thebarrier layer 120 is lower than the top surface of the work functionlayer 136 by a distance D₃. In some embodiments, the distance D₃ isbetween about 3 Å and about 55 Å.

FIG. 35 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 35 is similar to the gate structure of FIG. 32 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 35 may be formed using processsteps similar to the process steps described above with reference toFIGS. 26-32 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 29and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 30 are tuned, such that corners of theremaining portion of the barrier layer 120 are rounded and such that atop surface of the remaining portion of the barrier layer 120 is lowerthan a top surface of the work function layer 136. In some embodiments,an implantation angle of the treatment process may be increased. In someembodiments, implantation energy of the treatment process may beincreased. In some embodiments, a duration of the selective etch processmay be increased. In some embodiments, etch selectively between thetreated and un-treated portions of the barrier layer 120 may bedecreased. In other embodiments where the remaining portion of thebarrier layer 120 is formed using a blanket deposition process followedby an anisotropic etch process, parameters of the anisotropic etchprocess (such as, for example, etchant composition and etch duration)are tuned, such that corners of the remaining portion of the barrierlayer 120 are rounded and such that a top surface of the remainingportion of the barrier layer 120 is lower than a top surface of the workfunction layer 136. In some embodiments, the top surface of theremaining portion of the barrier layer 120 is lower than the top surfaceof the work function layer 136 by a distance D₄. In some embodiments,the distance D₄ is between about 3 Å and about 55 Å.

FIGS. 36-43 are cross-sectional views of intermediate stages in themanufacturing of a gate structure including the gate stacks 95A and 95Billustrated in FIGS. 14A and 14B, in accordance with some embodiments.In particular, FIGS. 36-43 illustrate detailed views of a region 89 ofFIG. 14A as the gate stacks 95A and 95B are formed in the opening 90. Insome embodiments, process steps described in FIGS. 36-43 are similar tothe process steps described above with reference to FIGS. 17-22 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein.

In FIG. 36 , interfacial layers 115A and 115B are formed in the opening90 in the regions 50A and 50B, respectively, as described above withreference to FIG. 17 and the description is not repeated herein. Afterforming the interfacial layers 115A and 115B, a gate dielectric layer116A and a gate dielectric layer 116B are formed in the opening 90 inthe regions 50A and 50B, respectively, as described above with referenceto FIG. 17 and the description is not repeated herein. After forming thegate dielectric layers 116A and 116B, a work function layer 118 isformed over the gate dielectric layer 116A in the region 50A asdescribed above with reference to FIG. 17 and the description is notrepeated herein.

In FIG. 37 , after forming the work function layer 118, a work functionlayer 138 is blanket deposited in the opening 90 in both the region 50Aand the region 50B. In some embodiments, the work function layer 138 maybe formed using similar materials and method as the work function layer118 described above with reference to FIG. 17 and the description is notrepeated herein. In some embodiments, the work function layer 118 andthe work function layer 138 comprise a same material. In otherembodiments, the work function layer 118 and the work function layer 138comprise different materials. In some embodiments, the work functionlayer 138 has a thickness between about 5 Å and about 400 Å.

In FIG. 38 , a portion of the work function layer 138 is removed fromthe region 50B, while a remaining portion of the work function layer 138remains in the region 50A. In some embodiments, the portion of the workfunction layer 138 may be removed from the region 50B using suitablephotolithography and etching methods.

In FIG. 39 , after patterning the work function layer 138, a barrierlayer 120 is blanket deposited in the opening 90 in both the region 50Aand the region 50B as described above with reference to FIG. 18 and thedescription is not repeated herein.

In FIG. 40 , after forming the barrier layer 120, a treatment process isperformed on the barrier layer 120 to form a treated portion 126 of thebarrier layer 120 as described above with reference to FIG. 19 and thedescription is not repeated herein. In some embodiments, aftercompleting the treatment process, a portion of the barrier layer 120disposed on a sidewall of the work function layer 118 and a sidewall ofthe work function layer 138 at an interface between the region 50A andthe region 50B remains untreated.

In FIG. 41 , the treated portion 126 (see FIG. 40 ) of the barrier layer120 is removed as described above with reference to FIG. 20 anddescription is not repeated herein. After completing the removalprocess, the un-treated portion of the barrier layer 120 remains alongthe sidewall of the work function layer 118 and the sidewall of the workfunction layer 138 at the interface between the region 50A and theregion 50B. In some embodiments, parameters of the treatment process(such as, for example, implantation angle and energy) described abovewith reference to FIG. 40 and parameters of the selective etch process(such as, for example, etchant composition, etch duration, and etchselectivity) are tuned, such that a top surface of the remaining portionof the barrier layer 120 and a top surface of the work function layer138 are substantially level within process variations.

In other embodiments, the remaining portion of the barrier layer 120 onthe sidewall of the work function layer 118 and the sidewall of the workfunction layer 138 may be formed by blanket depositing the barrier layer120 as described above with reference to FIG. 39 and removing horizontaland sloped portions of the barrier layer 120. In some embodiments, thehorizontal and sloped portions of the barrier layer 120 may be removedusing a suitable anisotropic etch process. In such embodiments, thetreatment process described above with reference to FIG. 40 is omitted.In some embodiments, parameters of the anisotropic etch process (suchas, for example, etchant composition and etch duration) are tuned, suchthat a top surface of the remaining portion of the barrier layer 120 anda top surface of the work function layer 138 are substantially levelwithin process variations.

In FIG. 42 , after forming the barrier layer 120 on the sidewall of thework function layer 118 and the sidewall of the work function layer 138,a work function layer 128 is blanket deposited in the opening 90 in boththe region 50A and the region 50B as described above with reference toFIG. 21 and the description is not repeated herein.

In FIG. 43 , after forming the work function layer 128, a shield layer130A and a shield layer 130B are formed in the opening 90 in the regions50A and 50B, respectively, as described above with reference to FIG. 22and the description is not repeated herein. After forming the shieldlayers 130A and 130B, a glue layer 132A and a glue layer 132B are formedin the opening 90 in the regions 50A and 50B, respectively, as describedabove with reference to FIG. 22 and the description is not repeatedherein. After forming the glue layers 132A and 132B, a conductive fillmaterial 134A and a conductive fill material 134B are formed in theopening 90 in the regions 50A and 50B, respectively, as described abovewith reference to FIG. 22 and the description is not repeated herein.

After forming the conductive fill materials 134A and 134B, aplanarization process, such as a CMP process, may be performed to removeexcess portions of the layers 115A, 115B, 116A, 116B, 118, 138, 128,130A, 130B, 132A, 132B, 134A and 134B, which excess portions are overthe top surface of the first ILD 88 (see FIG. 14B). The remainingportions of the interfacial layer 115A, the gate dielectric layer 116A,the work function layers 118, 128 and 138, the shield layer 130A, andthe glue layer 132A, and the conductive fill material 134A form thereplacement gates stack 95A in the region 50A. The remaining portions ofthe interfacial layer 115B, the gate dielectric layer 116 B, the workfunction layer 128, the shield layer 130B, and the glue layer 132B, andthe conductive fill material 134B form the replacement gates stack 95Bin the region 50B.

In some embodiments, the barrier layer 120 formed on the sidewall of thework function layer 118 and the sidewall of the work function layer 138prevents or reduces metal diffusion from the work function layer 128 tothe work function layers 118 and 138. For example, when the workfunction layer 128 comprises TiAl, TiAIN, TiAlC, TaAl or TaAlC, thebarrier layer 120 prevents or reduces Al diffusion from the workfunction layer 128 to the work function layers 118 and 138. Furthermore,the barrier layer 120 isolates the gate stack 95A from the gate stack95B and prevents or reduces a threshold voltage shift due to the metaldiffusion.

FIG. 44 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 44 is similar to the gate structure of FIG. 43 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 44 may be formed using processsteps similar to the process steps described above with reference toFIGS. 36-43 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 40and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 41 are tuned, such that corners of theremaining portion of the barrier layer 120 are rounded. In someembodiments, an implantation angle of the treatment process may beincreased. In some embodiments, implantation energy of the treatmentprocess may be increased. In some embodiments, a duration of theselective etch process may be increased. In some embodiments, etchselectively between the treated and un-treated portions of the barrierlayer 120 may be decreased. In other embodiments where the remainingportion of the barrier layer 120 is formed using a blanket depositionprocess followed by an anisotropic etch process, parameters of theanisotropic etch process (such as, for example, etchant composition andetch duration) are tuned, such that corners of the remaining portion ofthe barrier layer 120 are rounded.

FIG. 45 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 45 is similar to the gate structure of FIG. 43 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 45 may be formed using processsteps similar to the process steps described above with reference toFIGS. 36-43 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 40and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 41 are tuned, such that a top surface ofthe remaining portion of the barrier layer 120 is lower than a topsurface of the work function layer 138. In some embodiments,implantation energy of the treatment process may be increased. In someembodiments, a duration of the selective etch process may be increased.In other embodiments where the remaining portion of the barrier layer120 is formed using a blanket deposition process followed by ananisotropic etch process, parameters of the anisotropic etch process(such as, for example, etchant composition and etch duration) are tuned,such that the top surface of the remaining portion of the barrier layer120 is lower than the top surface of the work function layer 138. Insome embodiments, the top surface of the remaining portion of thebarrier layer 120 is lower than the top surface of the work functionlayer 138 by a distance D₅. In some embodiments, the distance D₅ isbetween about 3 Å and about 55 Å.

FIG. 46 is a cross-sectional view of a gate structure of a FinFET devicein accordance with some embodiments. In some embodiments, the gatestructure of FIG. 46 is similar to the gate structure of FIG. 43 , withsimilar features being labeled with similar numerical references, anddescriptions of these similar features are not repeated herein. In someembodiments, the gate structure of FIG. 46 may be formed using processsteps similar to the process steps described above with reference toFIGS. 36-43 and the description is not repeated herein. In someembodiments, parameters of the treatment process (such as, for example,implantation angle and energy) described above with reference to FIG. 40and parameters of the selective etch process (such as, for example,etchant composition, etch duration, and etch selectivity) describedabove with reference to FIG. 41 are tuned, such that corners of theremaining portion of the barrier layer 120 are rounded and such that atop surface of the remaining portion of the barrier layer 120 is lowerthan a top surface of the work function layer 138. In some embodiments,an implantation angle of the treatment process may be increased. In someembodiments, implantation energy of the treatment process may beincreased. In some embodiments, a duration of the selective etch processmay be increased. In some embodiments, etch selectively between thetreated and un-treated portions of the barrier layer 120 may bedecreased. In other embodiments where the remaining portion of thebarrier layer 120 is formed using a blanket deposition process followedby an anisotropic etch process, parameters of the anisotropic etchprocess (such as, for example, etchant composition and etch duration)are tuned, such that corners of the remaining portion of the barrierlayer 120 are rounded and such that a top surface of the remainingportion of the barrier layer 120 is lower than a top surface of the workfunction layer 138. In some embodiments, the top surface of theremaining portion of the barrier layer 120 is lower than the top surfaceof the work function layer 138 by a distance D₆. In some embodiments,the distance D₆ is between about 3 Å and about 55 Å.

In some embodiments, some or all of the devices illustrated in FIGS.22-26, 32-35, and 43-46 may coexists on a single wafer or a single die,and may be formed at different locations on the wafer or the die. Insome embodiments, the number of p-type work function layers may be morethan one to as much as six different layers.

FIG. 47 is a flow diagram illustrating a method 4700 of forming a gatestructure in accordance with some embodiments. The method 4700 startswith step 4701, where a sacrificial gate (such as the gate 72illustrated in FIGS. 8A and 8B) is formed over a substrate (such as thesubstrate 50 illustrated in FIGS. 8A and 8B) as described above withreference to FIGS. 8A and 8B. In step 4703, the sacrificial gate isremoved to form an opening (such as the opening 90 illustrated in FIGS.13A and 13B) as described above with reference to FIGS. 13A and 13B. Instep 4705, a first interfacial layer (such as the interfacial layer 115Aillustrated in FIG. 17 ) is formed in the opening over a first region(such as the region 50A illustrated in FIG. 17 ) of the substrate asdescribed above with reference to FIG. 17 . In step 4707, a secondinterfacial layer (such as the interfacial layer 115B illustrated inFIG. 17 ) is formed in the opening over a second region (such as theregion 50B illustrated in FIG. 17 ) of the substrate as described abovewith reference to FIG. 17 . In some embodiments, steps 4705 and 4707 areperformed at the same time. In other embodiments, step 4705 is performedbefore step 4707. In yet other embodiments, step 4705 is performed afterstep 4707. In step 4709, a first gate dielectric layer (such as the gatedielectric layer 116A illustrated in FIG. 17 ) is formed in the openingover first interfacial layer as described above with reference to FIG.17 . In step 4711, a second gate dielectric layer (such as the gatedielectric layer 116B illustrated in FIG. 17 ) is formed in the openingover second interfacial layer as described above with reference to FIG.17 . In some embodiments, steps 4709 and 4711 are performed at the sametime. In other embodiments, step 4709 is performed before step 4711. Inyet other embodiments, step 4709 is performed after step 4711. In step4713, a first work function layer (such as the work function layer 118illustrated in FIG. 17 ) is formed in the opening over the firstdielectric layer as described above with reference to FIG. 17 . In step4715, a barrier layer (such as the barrier layer 120 illustrated in FIG.18 ) is formed in the opening over the first work function layer and thesecond gate dielectric layer as described above with reference to FIG.18 . In step 4717, a treatment process is performed on a portion of thebarrier layer as described above with reference to FIG. 19 . In step4719, a treated portion of the barrier layer (such as the treatedportion 126 of the barrier layer 120 illustrated in FIG. 19 ) isselectively removed as described above with reference to FIG. 20 . Instep 4721, a second work function layer (such as the work function layer128 illustrated in FIG. 21 ) is formed over the first work functionlayer, the second dielectric layer and a remaining portion of thebarrier layer as described above with reference to FIG. 21 . In step4723, a first shield layer (such as the shield layer 130A illustrated inFIG. 22 ) is formed in the opening over the first region of thesubstrate as described above with reference to FIG. 22 . In step 4725, asecond shield layer (such as the shield layer 130B illustrated in FIG.22 ) is formed in the opening over the second region of the substrate asdescribed above with reference to FIG. 22 . In some embodiments, steps4723 and 4725 are performed at the same time. In other embodiments, step4723 is performed before step 4725. In yet other embodiments, step 4723is performed after step 4725. In step 4727, a first glue layer (such asthe glue layer 132A illustrated in FIG. 22 ) is formed in the openingover the first region of the substrate as described above with referenceto FIG. 22 . In step 4729, a second glue layer (such as the glue layer132B illustrated in FIG. 22 ) is formed in the opening over the secondregion of the substrate as described above with reference to FIG. 22 .In some embodiments, steps 4727 and 4729 are performed at the same time.In other embodiments, step 4727 is performed before step 4729. In yetother embodiments, step 4727 is performed after step 4729. In step 4731,a first conductive layer (such as the conductive fill material 134Aillustrated in FIG. 22 ) is formed in the opening over the first regionof the substrate as described above with reference to FIG. 22 . In step4733, a second conductive layer (such as the conductive fill material134B illustrated in FIG. 22 ) is formed in the opening over the secondregion of the substrate as described above with reference to FIG. 22 .In some embodiments, steps 4731 and 4733 are performed at the same time.In other embodiments, step 4731 is performed before step 4733. In yetother embodiments, step 4731 is performed after step 4733.

FIG. 48 is a flow diagram illustrating a method 4800 of forming a gatestructure in accordance with some embodiments. The method 4800 startswith step 4801, where a sacrificial gate (such as the gate 72illustrated in FIGS. 8A and 8B) is formed over a substrate (such as thesubstrate 50 illustrated in FIGS. 8A and 8B) as described above withreference to FIGS. 8A and 8B. In step 4803, the sacrificial gate isremoved to form an opening (such as the opening 90 illustrated in FIGS.13A and 13B) as described above with reference to FIGS. 13A and 13B. Instep 4805, a first interfacial layer (such as the interfacial layer 115Aillustrated in FIG. 26 ) is formed in the opening over a first region(such as the region 50A illustrated in FIG. 26 ) of the substrate asdescribed above with reference to FIG. 26 . In step 4807, a secondinterfacial layer (such as the interfacial layer 115B illustrated inFIG. 26 ) is formed in the opening over a second region (such as theregion 50B illustrated in FIG. 26 ) of the substrate as described abovewith reference to FIG. 26 . In some embodiments, steps 4805 and 4807 areperformed at the same time. In other embodiments, step 4805 is performedbefore step 4807. In yet other embodiments, step 4805 is performed afterstep 4807. In step 4809, a first gate dielectric layer (such as the gatedielectric layer 116A illustrated in FIG. 26 ) is formed in the openingover first interfacial layer as described above with reference to FIG.26 . In step 4811, a second gate dielectric layer (such as the gatedielectric layer 116B illustrated in FIG. 26 ) is formed in the openingover second interfacial layer as described above with reference to FIG.26 . In some embodiments, steps 4809 and 4811 are performed at the sametime. In other embodiments, step 4809 is performed before step 4811. Inyet other embodiments, step 4809 is performed after step 4811. In step4813, a first work function layer (such as the work function layer 118illustrated in FIG. 26 ) is formed in the opening over the first gatedielectric layer as described above with reference to FIG. 26 . In step4815, a second work function layer (such as the work function layer 136illustrated in FIG. 27 ) is formed in the opening over the first workfunction layer and the second gate dielectric layer as described abovewith reference to FIG. 27 . In step 4817, a barrier layer (such as thebarrier layer 120 illustrated in FIG. 28 ) is formed in the opening overthe second work function layer as described above with reference to FIG.28 . In step 4819, a treatment process is performed on a portion of thebarrier layer as described above with reference to FIG. 29 . In step4821, a treated portion of the barrier layer (such as the treatedportion 126 of the barrier layer 120 illustrated in FIG. 29 ) isselectively removed as described above with reference to FIG. 30 . Instep 4823, a third work function layer (such as the work function layer128 illustrated in FIG. 21 ) is formed over the second work functionlayer and a remaining portion of the barrier layer as described abovewith reference to FIG. 31 . In step 4825, a first shield layer (such asthe shield layer 130A illustrated in FIG. 32 ) is formed in the openingover the first region of the substrate as described above with referenceto FIG. 32 . In step 4827, a second shield layer (such as the shieldlayer 130B illustrated in FIG. 32 ) is formed in the opening over thesecond region of the substrate as described above with reference to FIG.32 . In some embodiments, steps 4825 and 4827 are performed at the sametime. In other embodiments, step 4825 is performed before step 4827. Inyet other embodiments, step 4825 is performed after step 4827. In step4829, a first glue layer (such as the glue layer 132A illustrated inFIG. 32 ) is formed in the opening over the first region of thesubstrate as described above with reference to FIG. 32 . In step 4831, asecond glue layer (such as the glue layer 132B illustrated in FIG. 32 )is formed in the opening over the second region of the substrate asdescribed above with reference to FIG. 32 . In some embodiments, steps4829 and 4831 are performed at the same time. In other embodiments, step4829 is performed before step 4831. In yet other embodiments, step 4829is performed after step 4831. In step 4833, a first conductive layer(such as the conductive fill material 134A illustrated in FIG. 32 ) isformed in the opening over the first region of the substrate asdescribed above with reference to FIG. 32 . In step 4835, a secondconductive layer (such as the conductive fill material 134B illustratedin FIG. 32 ) is formed in the opening over the second region of thesubstrate as described above with reference to FIG. 32 . In someembodiments, steps 4833 and 4835 are performed at the same time. Inother embodiments, step 4833 is performed before step 4835. In yet otherembodiments, step 4833 is performed after step 4835.

FIG. 49 is a flow diagram illustrating a method 4900 of forming a gatestructure in accordance with some embodiments. The method 4900 startswith step 4901, where a sacrificial gate (such as the gate 72illustrated in FIGS. 8A and 8B) is formed over a substrate (such as thesubstrate 50 illustrated in FIGS. 8A and 8B) as described above withreference to FIGS. 8A and 8B. In step 4903, the sacrificial gate isremoved to form an opening (such as the opening 90 illustrated in FIGS.13A and 13B) as described above with reference to FIGS. 13A and 13B. Instep 4905, a first interfacial layer (such as the interfacial layer 115Aillustrated in FIG. 36 ) is formed in the opening over a first region(such as the region 50A illustrated in FIG. 36 ) of the substrate asdescribed above with reference to FIG. 36 . In step 4907, a secondinterfacial layer (such as the interfacial layer 115B illustrated inFIG. 36 ) is formed in the opening over a second region (such as theregion 50B illustrated in FIG. 36 ) of the substrate as described abovewith reference to FIG. 36 . In some embodiments, steps 4905 and 4907 areperformed at the same time. In other embodiments, step 4905 is performedbefore step 4907. In yet other embodiments, step 4905 is performed afterstep 4907. In step 4909, a first gate dielectric layer (such as the gatedielectric layer 116A illustrated in FIG. 36 ) is formed in the openingover the first interfacial layer as described above with reference toFIG. 36 . In step 4911, a second gate dielectric layer (such as the gatedielectric layer 116B illustrated in FIG. 36 ) is formed in the openingover the second interfacial layer as described above with reference toFIG. 36 . In some embodiments, steps 4909 and 4911 are performed at thesame time. In other embodiments, step 4909 is performed before step4911. In yet other embodiments, step 4909 is performed after step 4911.In step 4913, a first work function layer (such as the work functionlayer 118 illustrated in FIG. 36 ) is formed in the opening over thefirst gate dielectric layer as described above with reference to FIG. 36. In step 4915, a second work function layer (such as the work functionlayer 138 illustrated in FIG. 38 ) is formed in the opening over thefirst work function layer as described above with reference to FIGS. 37and 38 . In step 4917, a barrier layer (such as the barrier layer 120illustrated in FIG. 39 ) is formed in the opening over the second workfunction layer and the second gate dielectric layer as described abovewith reference to FIG. 39 . In step 4919, a treatment process isperformed on a portion of the barrier layer as described above withreference to FIG. 40 . In step 4921, a treated portion of the barrierlayer (such as the treated portion 126 of the barrier layer 120illustrated in FIG. 40 ) is selectively removed as described above withreference to FIG. 41 . In step 4923, a third work function layer (suchas the work function layer 128 illustrated in FIG. 42 ) is formed overthe second work function layer, the second gate dielectric layer, and aremaining portion of the barrier layer as described above with referenceto FIG. 42 . In step 4925, a first shield layer (such as the shieldlayer 130A illustrated in FIG. 43 ) is formed in the opening over thefirst region of the substrate as described above with reference to FIG.43 . In step 4927, a second shield layer (such as the shield layer 130Billustrated in FIG. 43 ) is formed in the opening over the second regionof the substrate as described above with reference to FIG. 43 . In someembodiments, steps 4925 and 4927 are performed at the same time. Inother embodiments, step 4925 is performed before step 4927. In yet otherembodiments, step 4925 is performed after step 4927. In step 4929, afirst glue layer (such as the glue layer 132A illustrated in FIG. 43 )is formed in the opening over the first region of the substrate asdescribed above with reference to FIG. 43 . In step 4931, a second gluelayer (such as the glue layer 132B illustrated in FIG. 43 ) is formed inthe opening over the second region of the substrate as described abovewith reference to FIG. 43 . In some embodiments, steps 4929 and 4931 areperformed at the same time. In other embodiments, step 4929 is performedbefore step 4931. In yet other embodiments, step 4929 is performed afterstep 4931. In step 4933, a first conductive layer (such as theconductive fill material 134A illustrated in FIG. 43 ) is formed in theopening over the first region of the substrate as described above withreference to FIG. 43 . In step 4935, a second conductive layer (such asthe conductive fill material 134B illustrated in FIG. 43 ) is formed inthe opening over the second region of the substrate as described abovewith reference to FIG. 43 . In some embodiments, steps 4933 and 4935 areperformed at the same time. In other embodiments, step 4933 is performedbefore step 4935. In yet other embodiments, step 4933 is performed afterstep 4935.

In an embodiment, a semiconductor device includes a substrate and a gatestructure over the substrate. The substrate has a first region and asecond region. The gate structure extends across an interface betweenthe first region and the second region. The gate structure includes afirst gate dielectric layer over the first region, a second gatedielectric layer over the second region, a first work function layerover the first gate dielectric layer, a barrier layer along a sidewallof the first work function layer and above the interface between thefirst region and the second region, and a second work function layerover the first work function layer, the barrier layer and the secondgate dielectric layer. The second work function layer is in physicalcontact with a top surface of the first work function layer. In anembodiment, the gate structure further includes a third work functionlayer between the first gate dielectric layer and the first workfunction layer. In an embodiment, the first work function layer is inphysical contact with a top surface of the third work function layer. Inan embodiment, the barrier layer extends along a sidewall of the thirdwork function layer. In an embodiment, the second work function layer isin physical contact with a top surface and a sidewall of the barrierlayer. In an embodiment, the barrier layer is laterally spaced apartfrom the interface between the first region and the second region. In anembodiment, a top surface of the barrier layer is substantially levelwith the top surface of the first work function layer. In an embodiment,a top surface of the barrier layer is lower than the top surface of thefirst work function layer. In an embodiment, the barrier layer has arounded corner.

In another embodiment, a semiconductor device includes a substrate and agate structure over the substrate. The substrate has a first region anda second region. A first portion of the gate structure is above thefirst region and a second portion of the gate structure is above thesecond region. The gate structure includes a first gate dielectric layerover the first region, a second gate dielectric layer over the secondregion, and a first p-type work function layer over the first gatedielectric layer. The first p-type work function layer has a sidewallabove an interface between the first region and the second region. Thegate structure further includes a barrier layer in physical contact withthe sidewall of the first p-type work function layer. The barrier layerextends along the sidewall of the first p-type work function layer nothigher than to a top surface of the first p-type work function layer.The gate structure further includes an n-type work function layer overthe first p-type work function layer. The n-type work function layer isin physical contact with a top surface and a sidewall of the barrierlayer. The gate structure further includes a first conductive layer overa first portion of the n-type work function layer above the first regionand a second conductive layer over a second portion of the n-type workfunction layer above the second region. In an embodiment, the firstp-type work function layer is in physical contact with the secondportion of the n-type work function layer. In an embodiment, the n-typework function layer is in physical contact with the second gatedielectric layer. In an embodiment, a top surface of the barrier layeris substantially level with the top surface of the first p-type workfunction layer. In an embodiment, a top surface of the barrier layer islower than the top surface of the first p-type work function layer. Inan embodiment, the first p-type work function layer is in physicalcontact with a bottom surface of the barrier layer. In an embodiment,the first p-type work function layer is in physical contact with thesecond gate dielectric layer.

In yet another embodiment, a method includes forming a sacrificial gateover a substrate. The substrate has a first region and a second region.The sacrificial gate extends across an interface between the firstregion and the second region. The sacrificial gate is removed to form anopening. A first gate dielectric layer is formed over the first regionin the opening. A second gate dielectric layer is formed over the secondregion in the opening. A first work function layer is formed over thefirst gate dielectric layer in the opening. A dielectric layer isdeposited over the first work function layer and the second gatedielectric layer in the opening. The dielectric layer includes a firstmaterial. The dielectric layer is patterned to form a barrier layer on asidewall of the first work function layer. A second work function layeris formed over the first work function layer and the barrier layer. Inan embodiment, patterning the dielectric layer includes performing atreatment process on the dielectric layer to form a treated portion ofthe dielectric layer. The treated portion of the dielectric layerincludes a second material different from the first material. Thetreated portion of the dielectric layer is selectively removed. Anun-treated portion of the dielectric layer remains on the sidewall ofthe first work function layer and forms the barrier layer. In anembodiment, performing the treatment process on the dielectric layerincludes performing an implantation process on the dielectric layer. Inan embodiment, selectively removing the treated portion of thedielectric layer includes performing a selective etch process on thetreated portion of the dielectric layer. In an embodiment, patterningthe dielectric layer includes performing an anisotropic etch process onthe dielectric layer.

In yet another embodiment, a semiconductor device includes a substrateand a gate structure over the substrate. The substrate has a firstregion and a second region. The gate structure extends across aninterface between the first region and the second region. The gatestructure includes a first gate dielectric layer over the first region,a second gate dielectric layer over the second region, a first workfunction layer over the first gate dielectric layer, a second workfunction layer over the first work function layer and the second gatedielectric layer, a barrier layer along a sidewall of the second workfunction layer, and a third work function layer over the second workfunction layer and the barrier layer. The second work function layer isin physical contact with a top surface of the first work function layerand a top surface of the second gate dielectric layer. The barrier layeris above the interface between the first region and the second region.The third work function layer is in physical contact with a top surfaceof the second work function layer and a top surface and a sidewall ofthe barrier layer. In an embodiment, the top surface of the barrierlayer is substantially level with the top surface of the second workfunction layer. In an embodiment, the top surface of the barrier layeris lower than the top surface of the second work function layer. In anembodiment, the barrier layer has a rounded corner. In an embodiment,the gate structure further includes: a first shield layer over the thirdwork function layer, where the first shield layer is over the first gatedielectric layer; and a second shield layer over the third work functionlayer, where the second shield layer is over the second gate dielectriclayer. In an embodiment, the gate structure further includes: a firstglue layer over the first shield layer; and a second glue layer over thesecond shield layer. In an embodiment, the gate structure furtherincludes: a first conductive layer over the first glue layer; and asecond conductive layer over the second glue layer.

In yet another embodiment, a semiconductor device includes a substrateand a gate structure over the substrate. The substrate has a firstregion and a second region. A first portion of the gate structure isabove the first region and a second portion of the gate structure isabove the second region. The gate structure includes a first gatedielectric layer over the first region, a second gate dielectric layerover the second region, a first p-type work function layer over thefirst gate dielectric layer, a second p-type work function layer overthe first p-type work function layer and the second gate dielectriclayer, a barrier layer in physical contact with the sidewall of thesecond p-type work function layer, an n-type work function layer overthe second p-type work function layer, a first conductive layer over afirst portion of the n-type work function layer above the first region,and a second conductive layer over a second portion of the n-type workfunction layer above the second region. The first p-type work functionlayer has a sidewall above an interface between the first region and thesecond region. The second p-type work function layer has a sidewallabove the interface between the first region and the second region. Thebarrier layer extends along the sidewall of the second p-type workfunction layer not higher than to a top surface of the second p-typework function layer. The n-type work function layer is in physicalcontact with a top surface and a sidewall of the barrier layer. In anembodiment, the top surface of the barrier layer is substantially levelwith the top surface of the second p-type work function layer. In anembodiment, the top surface of the barrier layer is lower than the topsurface of the second p-type work function layer. In an embodiment, thesecond p-type work function layer is in physical contact with a bottomsurface of the barrier layer. In an embodiment, the second p-type workfunction layer is in physical contact with a top surface of the secondgate dielectric layer. In an embodiment, the first p-type work functionlayer and the second p-type work function layer comprise differentmaterials. In an embodiment, the first p-type work function layer andthe second p-type work function layer comprise a same material.

In yet another embodiment, a method includes forming a sacrificial gateover a substrate. The substrate has a first region and a second region.The sacrificial gate extends across an interface between the firstregion and the second region. The sacrificial gate is removed to form anopening. A first gate dielectric layer is formed over the first regionin the opening. A second gate dielectric layer is formed over the secondregion in the opening. A first work function layer is formed over thefirst gate dielectric layer in the opening. A second work function layeris formed over the first work function layer and the second gatedielectric layer in the opening. A dielectric layer is deposited overthe second work function layer in the opening. The dielectric layerincludes a first material. The dielectric layer is patterned to form abarrier layer on a sidewall of the second work function layer. A thirdwork function layer is formed over the second work function layer andthe barrier layer. In an embodiment, patterning the dielectric layerincludes: performing a treatment process on the dielectric layer to forma treated portion of the dielectric layer, where the treated portion ofthe dielectric layer comprises a second material different from thefirst material; and selectively etching the treated portion of thedielectric layer, where an un-treated portion of the dielectric layerremains on the sidewall of the second work function layer and forms thebarrier layer. In an embodiment, the treatment process comprises anoxidation process, a fluorination process, a nitridation process, or achlorination process. In an embodiment, the treatment process comprisesan implantation process. In an embodiment, patterning the dielectriclayer comprises performing an anisotropic etch process on the dielectriclayer. In an embodiment, the first work function layer and the secondwork function layer are p-type work function layers, and the third workfunction layer is an n-type work function layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a first gatedielectric layer over a first channel region of a substrate; forming asecond gate dielectric layer over a second channel region of thesubstrate; forming one or more first work function layers over the firstgate dielectric layer and the second gate dielectric layer; removing atleast one of the one or more first work function layers over the secondgate dielectric layer; depositing a material layer over the first gatedielectric layer and the second gate dielectric layer, wherein the oneor more first work function layers over the first channel region arebetween the material layer and the first gate dielectric layer, whereinany remaining layers of the one or more first work function layers afterremoving at least one of the one or more first work function layers arebetween the material layer and the second gate dielectric layer, whereinthe material layer comprises a first material; patterning the materiallayer to form a barrier layer on a sidewall of at least an upper layerof the one or more first work function layers; and forming a third workfunction layer over the one or more first work function layers and thebarrier layer.
 2. The method of claim 1, wherein patterning the materiallayer comprises: performing a first implantation process to implant thematerial layer to form a modified material layer, the modified materiallayer comprises a second material different from the first material,wherein a portion of the material layer remains the first material; andremoving the modified material layer.
 3. The method of claim 2, whereinthe first implantation process comprises an anneal process.
 4. Themethod of claim 2, wherein performing the first implantation processcomprises implanting oxygen, fluorine, nitrogen, or chlorine.
 5. Themethod of claim 2, wherein the first implantation process is performedat a first implant angle relative to a direction perpendicular to amajor surface of the substrate, wherein the first implant angle is in arange between 5 degrees to 22 degrees.
 6. The method of claim 5, whereinthe first implantation process is performed at an implantation energy ina range between 100 eV and 6 KeV.
 7. The method of claim 2, whereinremoving the modified material layer comprise etching the modifiedmaterial layer, wherein a ratio of an etch rate of the second materialof the modified material layer to an etch rate of the first material ofthe material layer is in a range between 1.8 and about
 50. 8. A methodcomprising: forming a sacrificial gate over a substrate, the substratehaving a first region and a second region, the sacrificial gateextending across an interface between the first region and the secondregion; forming a first dielectric layer adjacent the sacrificial gate;removing the sacrificial gate to form an opening; forming a gatedielectric layer over the first region and the second region in theopening; forming a first work function layer over the gate dielectriclayer in the opening over the first region and the second region;removing at least a portion of the first work function layer over thesecond region, wherein a first portion of the first work function layerremains over the first region; depositing a second dielectric layer inthe opening over the first region and the second region, wherein thefirst portion of the first work function layer is between the seconddielectric layer and the gate dielectric layer, wherein the seconddielectric layer comprises a first material; etching the seconddielectric layer to form a barrier layer on a sidewall of the first workfunction layer; and forming a conductive fill over the first region andthe second region, wherein the conductive fill is over the barrierlayer.
 9. The method of claim 8, further comprising forming a secondwork function layer over the first work function layer and the barrierlayer prior to forming the conductive fill.
 10. The method of claim 8,further comprising forming a second work function layer over the firstregion and the second region, wherein forming the first work functionlayer comprises forming the first work function layer over the secondwork function layer, wherein depositing the second dielectric layercomprises forming the second dielectric layer directly on an uppersurface of the second work function layer in the second region.
 11. Themethod of claim 8, further comprising forming a second work functionlayer over the first region and the second region, wherein forming thefirst work function layer comprises forming the first work functionlayer over the second work function layer, further comprising: removingat least a portion of the second work function layer over the secondregion, wherein a second portion of the second work function layerremains over the first region, wherein the barrier layer extends on asidewall of the second work function layer.
 12. The method of claim 8,wherein etching the second dielectric layer comprises: treating at leasta portion of the second dielectric layer to form a treated portion andan untreated portion, wherein the treated portion comprises a secondmaterial different than the first material; and etching the treatedportion of the second dielectric layer, wherein the untreated portion ofthe second dielectric layer remains on the sidewall of the first workfunction layer and forms the barrier layer.
 13. The method of claim 12,wherein treating the at least the portion of the second dielectric layercomprises performing an oxidation process, a fluorination process, anitridation process, or a chlorination process.
 14. The method of claim13, wherein treating the at least the portion of the second dielectriclayer comprises an implantation process.
 15. The method of claim 8,wherein etching the second dielectric layer comprises performing ananisotropic etch process on the second dielectric layer.
 16. Asemiconductor device comprising: a substrate having a first fin and asecond fin, the substrate having a first region and a second region; anda gate structure over the substrate, wherein a first portion of the gatestructure is over the first region and a second portion of the gatestructure is over the second region, and wherein the gate structurecomprises: a gate dielectric layer over the first region and the secondregion; a first work function layer over the gate dielectric layer overthe first region, the first work function layer having a sidewall facingthe second fin; a barrier layer along the sidewall of the first workfunction layer, wherein an upper surface of the first work functionlayer is free of the barrier layer; a second work function layer overthe first region and the second region, wherein the first work functionlayer is between second work function layer and the gate dielectriclayer, wherein the barrier layer is between second work function layerand the gate dielectric layer; and a conductive fill layer over thesecond work function layer over the first fin and over the second fin.17. The semiconductor device of claim 16, further comprising a thirdwork function layer over the first region, the third work function layerhaving a sidewall facing the second fin, wherein the third work functionlayer is between the first work function layer and the gate dielectriclayer.
 18. The semiconductor device of claim 17, wherein the barrierlayer extends along the sidewall of the third work function layer. 19.The semiconductor device of claim 16, wherein an upper surface of thebarrier layer is recessed from an upper surface of the first workfunction layer.
 20. The semiconductor device of claim 16, wherein thefirst work function layer has a first conductivity type, wherein thesecond work function layer has a second conductivity type different thanthe first conductivity type.